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PDF MSF8N80-G Data sheet ( Hoja de datos )
| Número de pieza | MSF8N80-G | |
| Descripción | 800V N-Channel MOSFET | |
| Fabricantes | Bruckewell Technology | |
| Logotipo |  |
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MSF8N80-G 800V N-Channel MOSFET
GENERAL DESCRIPTION
This Power MOSFET is produced using the advanced planar stripe, DMOS
technology. This latest technology has been especially designed to
minimize on-state resistance, have high rugged avalanche characteristics.
These devices are well suited for high efficiency switch mode power
supplies, active power factor correction, and electronic lamp ballasts based
on half bridge topology.
FEATURES
• RDS(on) (typ 1.3 Ω )@VGS=10V
• Gate Charge (Typical 39nC)
• Improved dv/dt Capability, High Ruggedness
• 100% Avalanche Tested
• Maximum Junction Temperature Range (150°C)
• Halogen Free
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
Drain-Source Voltage
Drain Current -Continuous (TC=25℃)
Drain Current -Continuous (TC=100℃)
Drain Current -Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC=25℃)
- Derate above 25℃
TJ,TSTG Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
TL
1/8'' from case for 5 seconds
• Drain current limited by maximum junction temperature
Value
800
8
5.0
32
±30
850
17.8
4.5
59
0.48
–55 to + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/℃
℃
℃
©Bruckewell Technology Corporation Rev. A -2012
http://www.Datasheet4U.com
1 page  
MSF8N80-G 800V N-Channel MOSFET
• Characteristic Curves
Figure 7. Breakdown Voltage Variation vs
Temperature
Figure 8. On-Resistance Variation vs Temperature
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs
Case Temperature
Figure 11. Transient Thermal Response Curve
©Bruckewell Technology Corporation Rev. A -2012
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MSF8N80-G.PDF ] | |
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