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PDF MBRF20100CT Data sheet ( Hoja de datos )
| Número de pieza | MBRF20100CT | |
| Descripción | Schottky Power Rectifier | |
| Fabricantes | ON Semiconductor | |
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MBRF20100CT
SWITCHMODE
Schottky Power Rectifier
The SWITCHMODE Power Rectifier employs the Schottky Barrier
principle in a large area metal−to−silicon power diode.
State−of−the−artgeometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for use as
rectifiers in very low −voltage, high −frequency switching power
supplies, free wheeling diodes and polarity protection diodes.
Features
• Highly Stable Oxide Passivated Junction
• Very Low Forward Voltage Drop
• Matched Dual Die Construction
• High Junction Temperature Capability
• High dv/dt Capability
• Excellent Ability to Withstand Reverse Avalanche Energy Transients
• Guardring for Stress Protection
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Electrically Isolated. No Isolation Hardware Required.
• These are Pb−Free Devices
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 1.9 Grams (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
20 AMPERES, 100 VOLTS
1
2
3
1 23
ISOLATED TO−220
CASE 221D
STYLE 3
ORDERING AND MARKING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
November, 2012 − Rev. 9
1
Publication Order Number:
MBRF20100CT/D
http://www.Datasheet4U.com
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MBRF20100CT.PDF ] | |
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