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Datasheet FS30KM-03 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | FS30KM-03 | N-channel POWER MOSFET MITSUBISHI Nch POWER MOSFET
FS30KM-03
HIGH-SPEED SWITCHING USE
FS30KM-03
OUTLINE DRAWING
10 ± 0.3
6.5 ± 0.3 3 ± 0.3
Dimensions in mm
2.8 ± 0.2
15 ± 0.3
f 3.2 ± 0.2
14 ± 0.5
3.6 ± 0.3
1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15
E
0.75 ± 0.15
2.54 ± 0.25
2.54 ± 0.25
4.5 ± 0.2
1 2 3
2. |  Mitsubishi Electric Semiconductor | mosfet |
FS3 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | FS300R12KE3 | IGBT, Insulated Gate Bipolar Transistor Technische Information / technical information
IGBT-Module IGBT-modules
FS300R12KE3
- EconoPACK™+ Modul mit Trench/Feldstop IGBT3 und High Efficiency Diode - EconoPACK™+ with trench/fieldstop IGBT3 and EmCon High Efficiency diode
IGBT-Wechselrichter / IGBT-inverter
# $ % 2 # $ . A % & ; $ ' $  Eupec igbt | | |
| 2 | FS300R12KF4 | European Power- Semiconductor and Electronics Company GmbH
European PowerSemiconductor and Electronics Company GmbH + Co. KG
Marketing Information FS 300 R 12 KF4
61,5 13 61,5 M6
31,5
190 57
171
U
V
W
CX CU 2,8x0,5 5,5 26,4 5 3x5=15
GX EX EU GU
CY
CV 3,35
CZ CW
4 deep
7
GY EY EV GV GZ EZ EW GW
+ Cu Gu Eu Cx Gx Ex Cv Gv Ev  eupec GmbH data | | |
| 3 | FS300R16KF4 | IGBT, Insulated Gate Bipolar Transistor European PowerSemiconductor and Electronics Company GmbH + Co. KG
Marketing Information FS 300 R 16 KF4
61,5 13 61,5 M6
190 57
171
U
V
W
CX CU 2,8x0,5 5,5 26,4 5 3x5=15 + Cu Gu Eu Cx Gx Ex Cv Gv Ev Cy Gy Ey
CY
CV 3,35
CZ CW
4 deep
7
GY EY EV GV GZ EZ EW GW
GX EX EU Eupec igbt | | |
| 4 | FS300R17KE3 | IGBT, Insulated Gate Bipolar Transistor Technische Information / technical information
IGBT-Module IGBT-modules
FS300R17KE3
Vorläufige Daten / preliminary data
./01 5/ 678 5/ 5/=> ;B7B .C01 ! '() * +,'() * +,./0 HIB .C0BJ KC CM6B . . -MPH -SPH 5/01 5C01 '() * +,'() * +,'() * +,'() * +,'() * +,'() * +,'() * +,'() * +,'() * +,'() * +,'() Eupec igbt | | |
| 5 | FS300R17KE4 | IGBT, Insulated Gate Bipolar Transistor Technische Information / technical information
IGBT-Module IGBT-modules
FS300R17KE4
Vorläufige Daten / preliminary data
() *+,2+ 345 2+ 2+;< ()1 $%& ' ./ () 8@4@ *B,./ 6 6/ = .A CD E 16 * * 7 7 7
EconoPACK™+ Modul mit Trench/Feldstop IGBT4 und Emitter Controlled³ Diode EconoPACK™+ module wit  Infineon Technologies igbt | | |
| 6 | FS30AS-06 | Nch POWER MOSFET HIGH-SPEED SWITCHING USE FS30AS-06
MITSUBISHI Nch POWER MOSFET
FS30AS-06
HIGH-SPEED SWITCHING USE
OUTLINE DRAWING
6.5 5.0 ± 0.2 r
Dimensions in mm 0.5 ± 0.1
1.5 ± 0.2
5.5 ± 0.2 10MAX.
2.3MIN.
1.0MAX.
¡10V DRIVE ¡VDSS .................................................................................. 60V ¡rDS ( Mitsubishi Electric Semiconductor mosfet | | |
| 7 | FS30AS-06 | Nch POWER MOSFET HIGH-SPEED SWITCHING USE MITSUBISHI Nch POWER MOSFET
FS2KM-12
HIGH-SPEED SWITCHING USE
FS2KM-12
OUTLINE DRAWING
10 ± 0.3 6.5 ± 0.3 3 ± 0.3
Dimensions in mm
2.8 ± 0.2
15 ± 0.3
φ 3.2 ± 0.2
14 ± 0.5
3.6 ± 0.3
1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15
0.75 ± 0.15
2.54 ± 0.25
2.54 ± 0.25 4.5 ± 0.2 q GATE w DRAI  Powerex Power Semiconductors mosfet | |
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