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Número de pieza | GT60J323 | |
Descripción | Insulated Gate Bipolar Transistor Silicon N Channel IGBT | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de GT60J323 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! GT60J323
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60J323
Current Resonance Inverter Switching Application
Unit: mm
• Enhancement mode type
• High speed : tf = 0.16 μs (typ.) (IC = 60A)
• Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 60A)
• FRD included between emitter and collector
• Fourth generation IGBT
• TO-3P(LH) (Toshiba package name)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Continuous collector @ Tc = 100°C
current
@ Tc = 25°C
Pulsed collector current
DC
Diode forward current
Pulsed
Collector power
dissipation
@ Tc = 100°C
@ Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCES
VGES
IC
ICP
IF
IFP
PC
Tj
Tstg
Rating
600
±25
33
60
120
30
120
68
170
150
−55 to 150
Unit
V
V
A
A
A
W
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-21F2C
Weight: 9.75 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance (IGBT)
Thermal resistance (diode)
Symbol
Rth (j-c)
Rth (j-c)
Max
0.74
1.56
Unit
°C/W
°C/W
Equivalent Circuit
Marking
Gate
Collector
Emitter
TOSHIBA
GT60J323
JAPAN
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1 2006-11-01
1 page ICmax – Tc
70
Common
emitter
60 VGE = 15 V
50
40
30
20
10
0
25 50 75 100 125 150
Case temperature Tc (°C)
GT60J323
rth (t) – tw
103
Tc = 25°C
102
101
100
10−1
Diode stage
IGBT stage
10−2
10−3
10−5
10−4
10−3
10−2
10−1
100
101
102
Pulse width tw (s)
IF – VF
100
Common emitter
VGE = 0
80
60
40
25
20 Tc = 125°C
−40
0
0 0.4 0.8 1.2 1.6 2.0
Forward voltage VF (V)
Irr, trr – IF
50 500
30 300
10
trr
5
100
50
3 Irr
Common emitter
30
di/dt = −100 A/μs
VGE = 0
Tc = 25°C
1 10
0 5 10 15 20 25 30
Forward current IF (A)
1000
500
300
f = 1 MHz
Tc = 25°C
Cj – VR
100
50
30
10
5
3
1
3 5 10
30 50 100
300 500
Reverse voltage VR (V)
200 10
8
Irr, trr – di/dt
Common emitter
IF = 30 A
Tc = 25°C
6 trr
100
4
Irr
2
00
0 40 80 120 160 200
di/dt (A/μs)
5 2006-11-01
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet GT60J323.PDF ] |
Número de pieza | Descripción | Fabricantes |
GT60J321 | The 4th Generation Soft Switching Applications | Toshiba |
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GT60J323 | Insulated Gate Bipolar Transistor Silicon N Channel IGBT | Toshiba Semiconductor |
GT60J323H | Insulated Gate Bipolar Transistor Silicon N Channel IGBT | Toshiba |
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