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Datasheet BZX85C2V7 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BZX85C2V7 | Zener Diode Preliminary
BZX85C SERIES
Zener Diode
Voltage Range 2.4 to 212 Volts 1.3Watts Power Dissipation
Features
Silicon Planar Power Zener Diodes For use in stabilizing and clipping circuits with
high power rating The Zener voltages are graded according to
the international E24 standard. Replace |  Taiwan Semiconductor | diode |
| 2 | BZX85C2V7 | SILICON PLANAR POWER ZENER DIODES BZX85C
SILICON PLANAR POWER ZENER DIODES
for use in stabilizing and clipping circuits with high power rating.
The Zener voltages are graded according to the international E 24 standard. Other tolerances and higher Zener voltages are upon request.
Max. 0.7
Max. 2.8
Min. 25.4
Black Cathode Band
Bl |  SEMTECH | diode |
| 3 | BZX85C2V7 | Silicon Epitaxial Planar Z-Diodes BZX85C...
Vishay Telefunken
Silicon Epitaxial Planar Z–Diodes
Features
D D D D D
Sharp edge in reverse characteristics Low reverse current Low noise Very high stability Available with tighter tolerances
Applications
94 9369
Voltage stabilization
Absolute Maximum Ratings
Tj = 25_C Parameter Pow |  Vishay Telefunken | diode |
| 4 | BZX85C2V7 | SILICON PLANAR POWER ZENER DIODES BZX85 ...
SILICON PLANAR POWER ZENER DIODES
Features
Silicon Planar Power Zener Diodes for use in stabilizing and clipping circuits with high power rating. The Zener voltages are graded according to the international E 24 standard. Other voltage tolerances and higher Zener voltages upon request.
D |  GOOD-ARK Electronics | diode |
| 5 | BZX85C2V7 | SILICON ZENER DIODES BZX85C Series
VZ : 2.4 - 200 Volts PD : 1.3 Watts
FEATURES :
* Complete Voltage Range 2.7 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current
SILICON ZENER DIODES
DO - 41
0.107 (2.7) 0.080 (2.0)
1.00 (25.4) MIN.
0.205 (5.2) 0.166 (4.2)
MECHANICAL DATA
* C |  EIC discrete Semiconductors | diode |
BZX Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BZX10 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju  COS diode | | |
| 2 | BZX10 | Zener Diode w
w
w Low reverse current level
Very high stability Low noise
0.5Max
Available with tighter tolerances
CATHODE MARK
Applications
Voltage stabilization
T j =25 C
Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value
TStg
Marking
Example:
COS
6V8
w
w COS diode | | |
| 3 | BZX11 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS diode | | |
| 4 | BZX11 | Zener Diode w
w
w Low reverse current level
Very high stability Low noise
0.5Max
Available with tighter tolerances
CATHODE MARK
Applications
Voltage stabilization
T j =25 C
Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value
TStg
Marking
Example:
COS
6V8
w
w COS diode | | |
| 5 | BZX12 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS diode | | |
| 6 | BZX12 | Zener Diode w
w
w Low reverse current level
Very high stability Low noise
0.5Max
Available with tighter tolerances
CATHODE MARK
Applications
Voltage stabilization
T j =25 C
Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value
TStg
Marking
Example:
COS
6V8
w
w COS diode | | |
| 7 | BZX13 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS diode | |
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