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Datasheet SSS4N60 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | SSS4N60 | N-CHANNEL MOSFET Shenzhen Tuofeng Semiconductor Technology Co., Ltd
Technology co.,Ltd
SSS4N60
4 Amps，600Volts N-CHANNEL MOSFET
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DESCRIPTION
The SSS4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a h |  Tuofeng Semiconductor | mosfet |
| 2 | SSS4N60AS | Advanced Power MOSFET Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Lower RDS(ON) : 2.037 Ω (Typ.)
Absolute Maximum Ratings
Symbol VDSS
ID
IDM VGS EAS |  Fairchild Semiconductor | mosfet |
| 3 | SSS4N60B | 600V N-Channel MOSFET SSP4N60B/SSS4N60B
SSP4N60B/SSS4N60B
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, | Fairchild Semiconductor | mosfet |
SSS Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | SSS1004 | N-Channel enhancement mode power field effect transistors Main Product Characteristics
VDSS RDS(on)
100V 3.7mΩ (typ.)
ID 180A ①
Features and Benefits
TO-220
Advanced Process Technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse bo  Silikron Semiconductor transistor | | |
| 2 | SSS1004 | N-Channel MOSFET Main Product Characteristics
VDSS
100V
RDS(on) 3.4mΩ (typ.)
ID 180A ①
Features and Benefits
TO-220
Advanced Process Technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse b  GOOD-ARK mosfet | | |
| 3 | SSS1004A7 | N-Channel enhancement mode power field effect transistors Main Product Characteristics
VDSS RDS(on)
100V 3.0mΩ (typ.)
ID 180A ①
Features and Benefits
TO-263-7L
Advanced Process Technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse Silikron Semiconductor transistor | | |
| 4 | SSS10N60 | N-CHANNEL MOSFET Free Datasheet http://www.datasheet-pdf.com/
Free Datasheet http://www.datasheet-pdf.com/
Free Datasheet http://www.datasheet-pdf.com/
Free Datasheet http://www.datasheet-pdf.com/
Free Datasheet http://www.datasheet-pdf.com/
Free Datasheet http://www.datasheet-pdf.com/
Free Datasheet http://ww  Tuofeng mosfet | | |
| 5 | SSS10N60A | Advanced Power MOSFET
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Low RDS(ON) : 0.646 Ω (Typ.)
SSS10N60A
BVDSS = 600 V RDS(on) = Fairchild Semiconductor mosfet | | |
| 6 | SSS10N60B | N-Channel MOSFET
SSP10N60B/SSS10N60B
SSP10N60B/SSS10N60B
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to mini Fairchild Semiconductor mosfet | | |
| 7 | SSS1206 | N-Channel MOSFET Main Product Characteristics
VDSS
120V
RDS(on) 4mΩ (typ.)
ID 180A ① Features and Benefits
TO-220
Advanced Process Technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body GOOD-ARK mosfet | |
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| Número de pieza | Descripción | Fabricantes | |
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