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PDF HSMS-285C Data sheet ( Hoja de datos )
| Número de pieza | HSMS-285C | |
| Descripción | Surface Mount Zero Bias Schottky Detector Diodes | |
| Fabricantes | Agilent Technologies | |
| Logotipo |  |
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Agilent HSMS-285x Series
Surface Mount Zero Bias
Schottky Detector Diodes
Data Sheet
Description
Agilent’s HSMS-285x family of zero
bias Schottky detector diodes has
been designed and optimized for use
in small signal (Pin < -20 dBm) appli-
cations at frequencies below 1.5 GHz.
They are ideal for RF/ID and RF Tag
applications where primary (DC bias)
power is not available.
Important Note: For detector
applications with input power
levels greater than –20 dBm, use the
HSMS-282x series at frequencies
below 4.0 GHz, and the HSMS-286x
series at frequencies above 4.0 GHz.
The HSMS-285x series IS NOT
RECOMMENDED for these higher
power level applications.
Available in various package
configurations, these detector
diodes provide low cost solutions to
a wide variety of design problems.
Agilent’s manufacturing techniques
assure that when two diodes are
mounted into a single package, they
are taken from adjacent sites on the
wafer, assuring the highest possible
degree of match.
SOT-363 Package Lead
Code Identification
(top view)
UNCONNECTED
TRIO
654
BRIDGE
QUAD
654
Pin Connections and
Package Marking
16
25
34
Notes:
1. Package marking provides orienta-
tion and identification.
2. See “Electrical Specifications” for
appropriate package marking.
SOT-23/SOT-143 Package
Lead Code Identification
(top view)
SINGLE
3
SERIES
3
12
#0
12
#2
UNCONNECTED
PAIR
34
1 #5 2
SOT-323 Package Lead
Code Identification
(top view)
SINGLE
3
SERIES
3
Features
• Surface Mount SOT-23/
SOT-143 Packages
• Miniature SOT-323 and
SOT-363 Packages
• High Detection Sensitivity:
up to 50 mV/µW at 915 MHz
• Low Flicker Noise:
-162 dBV/Hz at 100 Hz
• Low FIT (Failure in Time)
Rate*
• Tape and Reel Options
Available
• Matched Diodes for
Consistent Performance
• Better Thermal
Conductivity for Higher
Power Dissipation
• Lead-free Option Available
* For more information see the Surface
Mount Schottky Reliability Data Sheet.
Attention:
Observe precautions for
handling electrostatic
sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 0)
Refer to Agilent Application Note A004R:
Electrostatic Discharge Damage and Control.
123
L
123
P
12
B
12
C
1 page  
5
Applications Information
Introduction
Agilent’s HSMS-285x family of
Schottky detector diodes has been
developed specifically for low
cost, high volume designs in small
signal (Pin < -20 dBm) applica-
tions at frequencies below
1.5 GHz. At higher frequencies,
the DC biased HSMS-286x family
should be considered.
In large signal power or gain con-
trol applications (Pin > -20 dBm),
the HSMS-282x and HSMS-286x
products should be used. The
HSMS-285x zero bias diode is not
designed for large signal designs.
Schottky Barrier Diode
Characteristics
Stripped of its package, a
Schottky barrier diode chip
consists of a metal-semiconductor
barrier formed by deposition of a
metal layer on a semiconductor.
The most common of several
different types, the passivated
diode, is shown in Figure 5, along
;;with its equivalent circuit.
METAL
PASSIVATION
PASSIVATION
N-TYPE OR P-TYPE EPI LAYER
RS
SCHOTTKY JUNCTION
Cj
Rj
N-TYPE OR P-TYPE SILICON SUBSTRATE
CROSS-SECTION OF SCHOTTKY
EQUIVALENT
FiguBrAeRR5I.ESRcDhIOoDtEtkCyHIPDiode Chip.CIRCUIT
RS is the parasitic series
resistance of the diode, the sum of
the bondwire and leadframe
resistance, the resistance of the
bulk layer of silicon, etc. RF
energy coupled into RS is lost as
heat — it does not contribute to
the rectified output of the diode.
CJ is parasitic junction capaci-
tance of the diode, controlled by
the thickness of the epitaxial layer
and the diameter of the Schottky
contact. R j is the junction
resistance of the diode, a function
of the total current flowing
through it.
8.33 X 10-5 n T
Rj =
––––––––––––
IS + Ib
= RV – Rs
= –0–.0–2–6– at 25°C
IS + Ib
where
n = ideality factor (see table of
SPICE parameters)
T = temperature in °K
IS = saturation current (see
table of SPICE parameters)
Ib = externally applied bias
current in amps
IS is a function of diode barrier
height, and can range from
picoamps for high barrier diodes
to as much as 5 µA for very low
barrier diodes.
The Height of the Schottky
Barrier
The current-voltage characteristic
of a Schottky barrier diode at
room temperature is described by
the following equation:
( )I = IS (exp –V––- –IR––S - 1)
0.026
On a semi-log plot (as shown in
the Agilent catalog) the current
graph will be a straight line with
inverse slope 2.3 X 0.026 = 0.060
volts per cycle (until the effect of
RS is seen in a curve that droops
at high current). All Schottky
diode curves have the same slope,
but not necessarily the same value
of current for a given voltage. This
is determined by the saturation
current, IS, and is related to the
barrier height of the diode.
Through the choice of p-type or
n-type silicon, and the selection of
metal, one can tailor the charac-
teristics of a Schottky diode.
Barrier height will be altered, and
at the same time CJ and RS will be
changed. In general, very low
barrier height diodes (with high
values of IS, suitable for zero bias
applications) are realized on
p-type silicon. Such diodes suffer
from higher values of RS than do
the n-type. Thus, p-type diodes are
generally reserved for small signal
detector applications (where very
high values of RV swamp out high
RS) and n-type diodes are used for
mixer applications (where high
L.O. drive levels keep RV low).
Measuring Diode Parameters
The measurement of the five
elements which make up the low
frequency equivalent circuit for a
packaged Schottky diode (see
Figure 6) is a complex task.
Various techniques are used for
each element. The task begins
with the elements of the diode
chip itself.
CP
LP
RS
RV
Cj
FOR THE HSMS-285x SERIES
CP = 0.08 pF
LP = 2 nH
Cj = 0.18 pF
RS = 25 Ω
RV = 9 KΩ
Figure 6. Equivalent Circuit of a
Schottky Diode.
5 Page 
Device Orientation
REEL
USER
FEED
DIRECTION
COVER TAPE
CARRIER
TAPE
For Outline SOT-143
TOP VIEW
4 mm
END VIEW
8 mm
Note: "AB" represents package marking code.
"C" represents date code.
11
For Outlines SOT-23, -323
TOP VIEW
4 mm
END VIEW
8 mm
ABC ABC ABC ABC
Note: "AB" represents package marking code.
"C" represents date code.
For Outline SOT-363
TOP VIEW
4 mm
END VIEW
8 mm
ABC ABC ABC ABC
Note: "AB" represents package marking code.
"C" represents date code.
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet HSMS-285C.PDF ] | |
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