|
|
Datasheet FLM0910-15F Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | FLM0910-15F | X-Band Internally Matched FET FLM0910-15F
X-Band Internally Matched FET
FEATURES •E High Output Power: P1dB=42.0dBm(Typ.) •E High Gain: G1dB=7.5dB(Typ.) •E High PAE: ηadd=32%(Typ.) •E Broad Band: 9.5~10.5GHz •E Impedance Matched Zin/Zout = 50Ω Hermetically Ε Sealed Package DESCRIPTION The FLM0910-15F is a power GaA |  SUMITOMO | data |
FLM Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | FLM0910-12F | X-Band Internally Matched FET FLM0910-12F
X-Band Internally Matched FET
FEATURES ・High Output Power: P1dB=40.5dBm(Typ.) ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd=25%(Typ.) ・Broad Band: 9.5~10.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION The FLM0910-12F is a power GaAs FET that  ETC data | | |
| 2 | FLM0910-12F | X-Band Internally Matched FET FLM0910-12F
X-Band Internally Matched FET
FEATURES ・High Output Power: P1dB=40.5dBm(Typ.) ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd=25%(Typ.) ・Broad Band: 9.5~10.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION The FLM0910-12F is a power GaAs FET that SUMITOMO data | | |
| 3 | FLM0910-15F | X-Band Internally Matched FET FLM0910-15F
X-Band Internally Matched FET
FEATURES •E High Output Power: P1dB=42.0dBm(Typ.) •E High Gain: G1dB=7.5dB(Typ.) •E High PAE: ηadd=32%(Typ.) •E Broad Band: 9.5~10.5GHz •E Impedance Matched Zin/Zout = 50Ω Hermetically Ε Sealed Package DESCRIPTION The FLM0910-15F is a power GaA SUMITOMO data | | |
| 4 | FLM0910-25F | X-Band Internally Matched FET FLM0910-25F
X-Band Internally Matched FET
FEATURES ・High Output Power: P1dB=44dBm(Typ.) ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd=30%(Typ.) ・Broad Band: 9.5～10.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION The FLM0910-25F is a power GaAs FET that SUMITOMO data | | |
| 5 | FLM0910-3F | X / Ku-Band Internally Matched FET FLM0910-3F
X, Ku-Band Internally Matched FET FEATURES
• • • • • • High Output Power: P1dB = 35.0dBm (Typ.) High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -46dBc@Po = 24.0dBm Broad Band: 9.5 ~ 10.5GHz Impedance Matched Zin/Zout = 50Ω
DESCRIPTION
The FLM0910-3F is SUMITOMO data | | |
| 6 | FLM0910-4F | X / Ku-Band Internally Matched FET FLM0910-4F
X, Ku-Band Internally Matched FET FEATURES
• • • • • • High Output Power: P1dB = 36.0dBm (Typ.) High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 9.5 ~ 10.5GHz Impedance Matched Zin/Zout = 50Ω
DESCRIPTION
The FLM0910-4F is SUMITOMO data | | |
| 7 | FLM0910-8F | X / Ku-Band Internally Matched FET FLM0910-8F
X, Ku-Band Internally Matched FET FEATURES
• • • • • • High Output Power: P1dB = 39.0dBm (Typ.) High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm Broad Band: 9.5 ~ 10.5GHz Impedance Matched Zin/Zout = 50Ω
DESCRIPTION
The FLM0910-8F is SUMITOMO data | | |
| 8 | FLM1011-12F | Ku-Band Internally Matched FET FLM1011-12F
X, Ku-Band Internally Matched FET FEATURES
• • • • • • • High Output Power: P1dB = 40.5dBm (Typ.) High Gain: G1dB = 6.0dB (Typ.) High PAE: ηadd = 25% (Typ.) Low IM3 = -45dBc@Po = 29.5dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed
DES  Eudyna Devices data | | |
| 9 | FLM1011-12F | X / Ku-Band Internally Matched FET FLM1011-12F
X, Ku-Band Internally Matched FET FEATURES
• • • • • • • High Output Power: P1dB = 40.5dBm (Typ.) High Gain: G1dB = 6.0dB (Typ.) High PAE: ηadd = 25% (Typ.) Low IM3 = -45dBc@Po = 29.5dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed
DES SUMITOMO data | |
| Esta página es del resultado de búsqueda del FLM0910-15F. Si pulsa el resultado de búsqueda de FLM0910-15F se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |