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PDF SSP7492N Data sheet ( Hoja de datos )
| Número de pieza | SSP7492N | |
| Descripción | N-Ch Enhancement Mode MOSFET | |
| Fabricantes | SeCoS Halbleitertechnologie | |
| Logotipo |  |
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Elektronische Bauelemente
SSP7492N
6.2A, 150V, RDS(ON) 88 m
N-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell
density trench process to provide low RDS(on) and to ensure
minimal power loss and heat dissipation. Typical applications are
DC-DC converters and power management in portable and
battery-powered products such as computers, printers, PCMCIA cards,
cellular and cordless telephones.
SOP-8PP
FEATURES
Low RDS(on) provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe SOP-8PP saves board
space.
Fast switching speed.
High performance trench technology.
PACKAGE INFORMATION
Package
MPQ
SOP-8PP
3K
Leader Size
13 inch
REF.
A
B
C
D
E
F
G
L
Millimeter
Min. Max.
0.85 1.00
5.3 BSC.
0.15 0.25
3.8 BCS.
6.05 BCS.
0.03 0.30
4.35 BCS.
0.40 0.70
REF.
θ
b
c
d
e
f
g
Millimeter
Min. Max.
0° 10°
5.2 BCS
0.30 0.50
1.27BSC
5.55 BCS.
0.10 0.40
1.2 BCS.
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Continuous Drain Current 1
Pulsed Drain Current 2
TA=25°C
TA=70°C
Continuous Source Current (Diode Conduction) 1
Power Dissipation 1
TA=25°C
TA=70°C
ID
IDM
IS
PD
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Data
Maximum Junction to Ambient 1
t≦10 sec
Steady State
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
RθJA
http://www.SeCoSGmbH.com/
18-Sep-2013 Rev. B
Rating
150
±20
6.2
5
30
6.7
5
3.2
-55~150
25
65
Unit
V
V
A
A
A
W
°C
°C / W
Any changes of specification will not be informed individually.
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