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Número de pieza | SKM200GB12E4 | |
Descripción | IGBT4 Modules | |
Fabricantes | Semikron International | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SKM200GB12E4 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! SKM200GB12E4
SEMITRANS®3
IGBT4 Modules
SKM200GB12E4
Features
• IGBT4 = 4. Generation (Trench)IGBT
• VCEsat with positive temperature
coefficient
• High short circuit capability, self
limiting to 6 x ICNOM
• Soft switching 4. Generation CAL
diode (CAL4)
Typical Applications
• AC inverter drives
• UPS
• Electronic welders at fsw up to 20 kHz
Remarks
• Case temperature limited to
Tc = 125°C max, recomm.
Top = -40 ... +150°C, product
rel. results valid for Tj = 150°
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
ICnom
ICRM
VGES
tpsc
Tj
Tj = 175 °C
ICRM = 3xICnom
VCC = 800 V
VGE ≤ 15 V
VCES ≤ 1200 V
Tc = 25 °C
Tc = 80 °C
Tj = 150 °C
Inverse diode
IF
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 3xIFnom
IFSM tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tstg
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-c)
IC = 200 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
Tj = 25 °C
Tj = 150 °C
VGE=VCE, IC = 7.6 mA
VGE = 0 V
VCE = 1200 V
Tj = 25 °C
Tj = 150 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 600 V
Tj = 150 °C
IC = 200 A
Tj = 150 °C
VGE = ±15 V
RG on = 1 Ω
RG off = 1 Ω
Tj = 150 °C
Tj = 150 °C
di/dton = 5500 A/µs Tj = 150 °C
di/dtoff = 2300 A/µs Tj = 150 °C
per IGBT
Values
1200
314
242
200
600
-20 ... 20
10
-40 ... 175
229
172
200
600
990
-40 ... 175
500
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min.
5
typ.
1.8
2.2
0.8
0.7
5.0
7.5
5.8
0.1
12.3
0.81
0.69
1130
3.8
204
40
21
490
107
27
max. Unit
2.05
2.4
0.9
0.8
5.8
8.0
6.5
0.3
0.14
V
V
V
V
mΩ
mΩ
V
mA
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
mJ
K/W
GB
© by SEMIKRON
Rev. 0 – 19.02.2009
1
1 page SKM200GB12E4
Semitrans 3
GB
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied
is made regarding delivery, performance or suitability.
© by SEMIKRON
Rev. 0 – 19.02.2009
5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet SKM200GB12E4.PDF ] |
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