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PDF PMV30XN Data sheet ( Hoja de datos )
| Número de pieza | PMV30XN | |
| Descripción | 3.2A N-channel Trench MOSFET | |
| Fabricantes | NXP Semiconductors | |
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PMV30XN
20 V, 3.2 A N-channel Trench MOSFET
Rev. 1 — 22 June 2011
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features and benefits
Low threshold voltage
Very fast switching
Trench MOSFET technology
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; ID = 3.2 A; Tj = 25 °C
Min Typ Max Unit
- - 20 V
-12 -
12 V
[1] - - 3.2 A
- 28 35 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
2. Pinning information
Table 2.
Pin
1
2
3
Pinning information
Symbol Description
G gate
S source
D drain
Simplified outline
3
12
SOT23 (TO-236AB)
Graphic symbol
D
G
mbb076 S
1 page  
NXP Semiconductors
PMV30XN
20 V, 3.2 A N-channel Trench MOSFET
7. Characteristics
Table 7. Characteristics
Symbol
Parameter
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
VGSth
gate-source threshold
voltage
IDSS drain leakage current
IGSS gate leakage current
RDSon
drain-source on-state
resistance
gfs forward
transconductance
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
Coss
Crss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
td(on)
turn-on delay time
tr rise time
td(off)
turn-off delay time
tf fall time
Source-drain diode
VSD source-drain voltage
Conditions
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VDS = VGS; Tj = 25 °C
VDS = 20 V; VGS = 0 V; Tj = 25 °C
VDS = 20 V; VGS = 0 V; Tj = 150 °C
VGS = 12 V; VDS = 0 V; Tj = 25 °C
VGS = -12 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; ID = 3.2 A; Tj = 25 °C
VGS = 4.5 V; ID = 3.2 A; Tj = 150 °C
VGS = 2.5 V; ID = 2.6 A; Tj = 25 °C
VDS = 10 V; ID = 3 A; Tj = 25 °C
VDS = 15 V; ID = 3 A; VGS = 4.5 V;
Tj = 25 °C
VDS = 15 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
VDS = 15 V; VGS = 4.5 V; RG(ext) = 6 Ω;
Tj = 25 °C; ID = 3 A
IS = 0.6 A; VGS = 0 V; Tj = 25 °C
Min Typ Max Unit
20 -
0.5 1
--
--
--
--
- 28
- 44
- 39
- 15
-V
1.5 V
1 µA
10 µA
100 nA
100 nA
35 mΩ
51 mΩ
60 mΩ
-S
- 4.9 7.4 nC
- 1.5 - nC
- 2.9 - nC
- 420 - pF
- 125 - pF
- 73 - pF
- 11 - ns
- 28 - ns
- 93 - ns
- 51 - ns
- 0.67 1.2 V
PMV30XN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 22 June 2011
© NXP B.V. 2011. All rights reserved.
5 of 15
5 Page 
NXP Semiconductors
10. Soldering
3.3
2.9
1.9
PMV30XN
20 V, 3.2 A N-channel Trench MOSFET
3 1.7
2
0.7 0.6
(3×) (3×)
0.5
(3×)
0.6
(3×)
1
Fig 19. Reflow soldering footprint for SOT23 (TO-236AB)
2.2
1.2
(2×)
solder lands
solder resist
solder paste
occupied area
Dimensions in mm
sot023_fr
1.4
(2×)
4.6 2.6
1.4
2.8
4.5
Fig 20. Wave soldering footprint for SOT23 (TO-236AB)
solder lands
solder resist
occupied area
Dimensions in mm
preferred transport direction during soldering
sot023_fw
PMV30XN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 22 June 2011
© NXP B.V. 2011. All rights reserved.
11 of 15
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet PMV30XN.PDF ] | |
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