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PDF SSF8205 Data sheet ( Hoja de datos )
| Número de pieza | SSF8205 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Silikron | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SSF8205 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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Main Product Characteristics:
VDSS
20V
RDS(on) 20mohm(typ.)
ID 4A
SOT23-6
Features and Benefits:
Advanced trench MOSFET process technology
Special designed for buttery protection, load
switching and general power management
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
SSF8205
D1
G1 G2
S1
D2
S2
Marking and pin
Assignment
Schematic diagram
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in buttery protection, power switching application and a wide variety of other
applications
Absolute max Rating:
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
TJ,TSTG
Limit
20
±10
4
25
1.25
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Resistance
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
100 ℃/W
©Silikron Semiconductor CO.,LTD.
2011.05.25
www.silikron.com
Version : 2.1
page 1 of 9
1 page  
SSF8205
TJ-Junction Temperature(℃)
Figure 7: Power Dissipation
TJ-Junction Temperature(℃)
Figure 8： Drain Current
Qg Gate Charge (nC)
Figure 9： Gate Charge
Vds Drain-Source Voltage (V)
Figure 10: Capacitance vs Vds
Figure 11: Safe Operation Area
©Silikron Semiconductor CO.,LTD.
2011.05.25
www.silikron.com
Version : 2.1
page 5 of 9
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet SSF8205.PDF ] | |
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