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Número de pieza | AP9585GH | |
Descripción | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
Fabricantes | Advanced Power Electronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AP9585GH (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! Advanced Power
Electronics Corp.
AP9585GH/J
RoHS-compliant Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
Description
G
D
S
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9585GJ) is
available for low-profile applications.
BVDSS
RDS(ON)
ID
-80V
180mΩ
-11.2A
GD
S TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Rating
-80
+25
-11.2
-7.1
-30
44.6
0.36
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
2.8
62.5
110
Units
V
V
A
A
A
W
W/℃
℃
℃
Units
℃/W
℃/W
℃/W
Data and specifications subject to change without notice
1
200810021
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet AP9585GH.PDF ] |
Número de pieza | Descripción | Fabricantes |
AP9585GH | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
AP9585GJ | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
AP9585GM | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
AP9585GM-HF | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
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