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PDF Si4441EDY Data sheet ( Hoja de datos )
| Número de pieza | Si4441EDY | |
| Descripción | P-Channel 30-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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New Product
P-Channel 30-V (D-S) MOSFET
Si4441EDY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
0.016 at VGS = - 10 V
- 30
0.026 at VGS = - 4.5 V
ID (A)
- 10.6
- 8.3
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
Ordering Information: Si4441EDY-T1
Si4441EDY-T1-E3 (Lead (Pb)-free)
FEATURES
• TrenchFET® Power MOSFET
• ESD Protected: 2500 V
APPLICATIONS
• Battery and Load Switching
- Notebook
Pb-free
Available
RoHS*
COMPLIANT
S
G
7600
P-Channel
D
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
VDS - 30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
ID
- 10.6
- 8.5
- 8.1
- 6.5
Pulsed Drain Current
IDM - 40
Continuous Source Current (Diode Conduction)a
IS
- 2.1
- 1.3
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
PD
2.5
1.6
1.5
0.9
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
t ≤ 10 sec
Steady State
Steady State
Symbol
RthJA
RthJF
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Typical
37
70
16
Maximum
50
85
20
Unit
°C/W
Document Number: 72133
S-60777-Rev. B, 08-May-06
www.vishay.com
1
1 page  
New Product
TYPICAL CHARACTERISTICS 25 °C, unless noted
2
1
Duty Cycle = 0.5
Si4441EDY
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 - 4
10 - 3
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 70 °C /W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10 - 2
10 - 1
1
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
600
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10 - 4
Single Pulse
10 - 3
10 - 2
10 - 1
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
1
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?72133.
Document Number: 72133
S-60777-Rev. B, 08-May-06
Work-In-Progress
www.vishay.com
5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet Si4441EDY.PDF ] | |
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