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PDF SSM5H07TU Data sheet ( Hoja de datos )
| Número de pieza | SSM5H07TU | |
| Descripción | Silicon Epitaxial Schottky Barrier Diode | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SSM5H07TU (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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SSM5H07TU
Silicon N Channel MOS Type (π-MOSⅣ)/Silicon Epitaxial Schottky Barrier Diode
SSM5H07TU
DC-DC Converter
• Nch MOSFET and schottky diode combined in one package
• Low RDS (ON) and low VF
Unit: mm
Absolute Maximum Ratings (Ta = 25°C) MOSFET
Characteristics
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Drain power dissipation
Channel temperature
Symbol
VDS
VGSS
ID
IDP (Note 2)
PD (Note 1)
t = 10s
Tch
Rating
20
±12
1.2
2.4
0.5
0.8
150
Unit
V
V
A
W
°C
Absolute Maximum Ratings (Ta = 25°C) SCHOTTKY
DIODE
Characteristics
Maximum (peak) reverse voltage
Reverse voltage
Average forward current
Peak one cycle surge forward current
(non-repetitive)
Junction temperature
Symbol
VRM
VR
IO
IFSM
Tj
Rating
15
12
0.5
2 (50 Hz)
125
Unit
V
V
A
A
°C
UFV
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-2R1A
Weight: 7 mg (typ.)
Absolute Maximum Ratings (Ta = 25°C) MOSFET, DIODE COMMON
Characteristics
Symbol
Rating
Unit
Storage temperature
Operating temperature
Tstg
Topr
(Note 3)
−55~125
−40~85
°C
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu pad: 645 mm2)
Note 2: Pulse width limited by max channel temperature
Note 3: Operating temperature limited by max channel temperature and max junction temperature
1 2007-11-01
1 page  
MOS Electrical Characteristics Graph
ID – VDS
2.5 Common Source
Ta = 25°C
VGS = 10 V
2
6V 4V
1.5
1
3V
0.5
2.5 V
0
0 0.4 0.8 1.2 1.6 2
Drain-Source Voltage VDS (V)
RDS (ON) – VGS
1
ID = 0.6 A
Common Source
0.8
0.6
Ta = 100°C
0.4
25°C
0.2 −25°C
0
0 2 46 8
Gate-Source Voltage VGS (V)
10
SSM5H07TU
ID – VGS
100
Common Source
VDS = 5 V
10
1
0.1
0.01
0.001
Ta = 100°C
25°C
−25°C
0.0001
0
0.5 1 1.5 2 2.5 3 3.5 4
Gate-Source Voltage VGS (V)
4.5
RDS (ON) – ID
1
Common Source
Ta = 25°C
0.8
0.6
VGS = 4 V
0.4
10 V
0.2
0
0 0.5 1 1.5 2
Drain Current ID (A)
2.5
RDS (ON) – Ta
1
Common Source
ID = 0.6 A
0.8
0.6 VGS = 4 V
0.4
0.2 10 V
0
−25 0 25 50 75 100 125 150
Ambient Temperature Ta (°C)
Vth – Ta
2
Common Source
VDS = 5V
1.6 ID = 0.1mA
1.2
0.8
0.4
0
−25 0 25 50 75 100 125 150
Ambient Temperature Ta (°C)
5 2007-11-01
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SSM5H07TU.PDF ] | |
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