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PDF SiA527DJ Data sheet ( Hoja de datos )
| Número de pieza | SiA527DJ | |
| Descripción | N- and P-Channel 12-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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SiA527DJ
Vishay Siliconix
N- and P-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
N-Channel
P-Channel
VDS (V)
12
- 12
RDS(on) () Max.
0.029 at VGS = 4.5 V
0.034 at VGS = 2.5 V
0.044 at VGS = 1.8 V
0.065 at VGS = 1.5 V
0.041 at VGS = - 4.5 V
0.060 at VGS = - 2.5 V
0.110 at VGS = - 1.8 V
0.174 at VGS = - 1.5 V
ID (A)
4.5a
4.5a
4.5a
4.5a
- 4.5a
- 4.5a
- 3.5
-1
Qg (Typ.)
5.6 nC
10.5 nC
PowerPAK SC-70-6 Dual
1
S1
2
G1
D1
3
D2
D1
6
D2
G2
5
2.05 mm
S2
4
2.05 mm
FEATURES
• TrenchFET® Power MOSFETs
• Thermally Enhanced PowerPAK®
SC-70 Package
- Small Footprint Area
- Low On-Resistance
• 100 % Rg Tested
• Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
• Portable Devices Such as Smart Phones, Tablet PCs
and Mobile Computing
- Load Switches
- Power Management
- DC/DC Converters
Marking Code
EJX
XXX
Part # code
G1
D1
G2
S2
Ordering Information:
SiA527DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
Lot Traceability
and Date Code
S1
N-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 100 µs)
Source Drain Current Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d,e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
12 - 12
4.5a
4.5a
4.5a,b,c
4.5a,b,c
±8
- 4.5a
- 4.5a
- 4.5a,b,c
- 4.4b,c
20
4.5a
1.6b,c
- 15
- 4.5a
- 1.6b,c
7.8 7.8
5
1.9b,c
1.2b,c
5
1.9b,c
1.2b,c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
N-Channel
P-Channel
Parameter
Symbol
Typ. Max. Typ. Max.
Unit
Maximum Junction-to-Ambientb,f
Maximum Junction-to-Case (Drain)
t5s
Steady State
RthJA
RthJC
52 65 52 65
12.5 16 12.5 16
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 110 °C/W.
Document Number: 64162
For technical questions, contact:: [email protected]
www.vishay.com
S13-1669-Rev. A, 29-Jul-13
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
SiA527DJ
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
TJ = 150 °C
10
TJ = 25 °C
1
0.1
0.0 0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
0.08
0.07
0.06
0.05
0.04
0.03
0.02
ID = 2 A; TJ = 125 °C
ID = 5 A; TJ = 125 °C
ID = 5 A;
TJ = 25 °C
ID = 2 A; TJ = 25 °C
0.01
0.00
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0.8
0.7
0.6
ID = 250 µA
0.5
0.4
0.3
20
15
10
5
0.2
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0
0.001 0.01
0.1
1
10 100 1000
Pulse (s)
Single Pulse Power (Junction-to-Ambient)
100
Limited by RDS(on)*
10
100 µs
1
TA = 25 °C
Single Pulse
0.1
1 ms
10 ms
100 ms, 1 s
10 s, DC
BVDSS Limited
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 64162
For technical questions, contact:: [email protected]
www.vishay.com
S13-1669-Rev. A, 29-Jul-13
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page 
P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
SiA527DJ
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Notes:
PDM
Single Pulse
10-3
10-2
10-1
1
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 110 °C/W
3. TJM - TA = PDMZthJA (t)
4. Surface Mounted
10 100 1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.01
10-4
0.05
0.02
Single Pulse
10-3
10-2
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
10-1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?64162.
Document Number: 64162
For technical questions, contact:: [email protected]
www.vishay.com
S13-1669-Rev. A, 29-Jul-13
11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet SiA527DJ.PDF ] | |
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