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PDF SiR492DP Data sheet ( Hoja de datos )
| Número de pieza | SiR492DP | |
| Descripción | N-Channel 12 V (D-S) MOSFET | |
| Fabricantes | Vishay | |
| Logotipo |  |
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New Product
N-Channel 12-V (D-S) MOSFET
SiR492DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
12 0.0038 at VGS = 4.5 V
0.0047 at VGS = 2.5 V
ID (A)e
40
40
Qg (Typ.)
41 nC
PowerPAK SO-8
6.15 mm
D
8D
7
D
6
D
5
S
1S
5.15 mm
2
S
3G
4
Bottom View
Ordering Information: SiR492DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free
• TrenchFET® Power MOSFET
• Low Thermal Resistance PowerPAK®
RoHS
COMPLIANT
Package with Small Size and Low 1.07 mm Profile
• 100 % Rg Tested
APPLICATIONS
• Secondary Synchronous Rectification
• Point-of-Load
• Load Switch
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)c, d
Limit
12
±8
40e
35e
27a, b
21.6a, b
60
30
3.5a, b
36
23
4.2a, b
2.7a, b
- 50 to 150
260
Unit
V
A
W
°C
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Package limited, pulse time ≤ 200 ms.
Document Number: 68840
S-82288-Rev. B, 22-Sep-08
www.vishay.com
1
1 page  
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 0.020
SiR492DP
Vishay Siliconix
10 TJ = 150 °C
1
TJ = 25 °C
0.1
0.01
0.001
0
0.3
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
ID = 250 µA
0.1
- 0.1
ID = 5 mA
- 0.3
0.016
0.012
0.008
TA = 125 °C
0.004
TA = 25 °C
0.000
012345
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
40
30
20
10
- 0.5
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited by RDS(on)*
0
0.001
0.01
0.1
1 10 100 600
Time (s)
Single Pulse Power, Junction-to-Ambient
Document Number: 68840
S-82288-Rev. B, 22-Sep-08
1 ms
10
10 ms
100 ms
1
1s
TA = 25 °C
Single Pulse
10 s
0.1
0.01
BVDSS Limited
DC
0.1 1 10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
5
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SiR492DP.PDF ] | |
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