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PDF Si1062X Data sheet ( Hoja de datos )
| Número de pieza | Si1062X | |
| Descripción | N-Channel 20 V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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New Product
N-Channel 20 V (D-S) MOSFET
Si1062X
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) () Max.
0.420 at VGS = 4.5 V
0.492 at VGS = 2.5 V
20
0.597 at VGS = 1.8 V
0.762 at VGS = 1.5 V
ID (A)
0.5
0.2
0.2
0.05
Qg (Typ.)
1 nC
SC-89 (3-LEADS)
FEATURES
• TrenchFET® Power MOSFET
• Gate-Source ESD Protected: 1000 V
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Load/Power Switching for Portable Devices
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories
• Battery Operated Systems
• Power Supply Converter Circuits
G1
3D
S2
Top View
Marking Code
J XX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si1062X-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ± 8
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
ID
0.53a, b
0.43a, b
Pulsed Drain Current (t = 300 µs)
IDM 2
Continuous Source-Drain Diode Current
TA = 25 °C
IS
0.18a, b
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
PD
0.22a, b
0.14a, b
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit
V
A
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 5 s.
t 5 s
Steady State
Symbol
RthJA
Typ.
440
540
Max.
530
650
Unit
°C/W
Document Number: 62661
For technical questions, contact: [email protected]
www.vishay.com
S12-2732-Rev. B, 12-Nov-12
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
New Product
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10 0.24
Si1062X
Vishay Siliconix
1 Limited by RDS(on)*
100 μs
1 ms
10 ms
0.1
100 ms
1s
0.01 DC, 10 s
TA = 25 °C
Single Pulse
BVDSS Limited
0.001
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
0.18
0.12
0.06
0
0 25 50 75 100 125 150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
1
Duty Cycle = 0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.0001
Single Pulse
0.001
0.01
0.1 1
Square Wave Pulse Duration (s)
10
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
1000
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62661.
Document Number: 62661
For technical questions, contact: [email protected]
www.vishay.com
S12-2732-Rev. B, 12-Nov-12
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet Si1062X.PDF ] | |
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