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PDF AMMC-6430 Data sheet ( Hoja de datos )
| Número de pieza | AMMC-6430 | |
| Descripción | 26 - 34 GHz 1W Power Amplifier | |
| Fabricantes | Agilent | |
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Preliminary Information
Agilent AMMC-6430
26 – 34 GHz 1W Power Amplifier
Data Sheet
Features
• Wide frequency range: 26 - 34 GHz
• High gain: 18 dB
• 50 Ω Input and Output
• High Power: 29 dBm at P-1dB
• Integrated RF Power Detector
Applications
• Microwave Radio Systems
• LMDS & Pt-Pt mmW Long Haul Platforms
• Satellite VSAT, DBS Up/Down Link
• 802.16 Broadband Wireless Access
• Commercial Grade Military
Description
The AMMC-6430 MMIC is a broadband 1W power amplifier
designed for use in transmitters that operate in various
frequency bands between 26GHz and 34GHz. It can be
attached to the output of the AMMC-5040 (20-40 GHz)
MMIC amplifier, increasing the power handling capability
of transmitters requiring linear operation. At 30GHz, it
provides 29dBm of output power (P-1dB) and 20dB of
small-signal gain from a small easy-to-use device. The
device has input and output matching circuitry for use in 50
Ω environments. The AMMC-6430 also integrates a
temperature compensated RF power detection circuit that
enables power detection of 0.3V/W at 30GHz. DC bias is
simple and the device operates on widely available 5V for
current supply (negative voltage only needed for Vg). It is
fabricated in a PHEMT process for exceptional power and
gain performance.
Chip Size: 2500 x 1750 µm (100 x 69 mils)
Chip Size Tolerance: ± 10µm (±0.4 mils)
Chip Thickness: 100 ± 10µm (4 ± 0.4 mils)
DC Pad Dimensions: 100 x 100 µm (4 x 4 ± 0.4 mils)
RF I/O Pad Dimensions: 120 x 80µm (4.7 x 3.15 ± 0.4 mils)
AMMC-6430: DC & RF Specifications [1]
Sym Parameters/Conditions
Typ.
Min/
Max
VD Drain Supply Voltage
Vg Gate Supply Voltage
ID Drain Supply Current
Gain Small-signal Gain
IP3 Third Order Intercept
RLin Input Return Loss
RLout Output Return Loss
P-1dB Power @ 1dB Gain Comp
Psat Power @ 3dB Gain Comp
Isol Reverse Isolation
V5
V -0.8
mA 850 1000
dB 18 17
dBm 38
dB -15 -10
dB -13 -10
dBm 29 27
dBm 30
dB 40
This preliminary data is provided to assist you in the evaluation of product(s) currently under development. Until Agilent Technologies
releases this product for general sales, Agilent Technologies reserves the right to alter prices, specifications, features, capabilities,
functions, release dates, and remove availability of the product(s) at anytime.
Revision Date: 5/26/04
Revision Number: 4.0
1 page  
Biasing and Operation
The recommended quiescent
DC bias condition for optimum
efficiency, performance, and
reliability is Vd=5 volts with Vg
set for Id=850 mA. A single DC
gate supply connected to Vg
will bias all gain stages.
Muting can be accomplished by
setting Vg and /or Vg to the
pinch-off voltage Vp.
An optional output power
detector network is also
provided. The differential
voltage between the Det-Ref
and Det-Out pads can be
correlated with the RF power
emerging from the RF output
port. The detected voltage is
given by :
( )V = Vref − Vdet − Vofs
where Vref is the voltage at the
DET _ R port, Vdet is a voltage at
the DET _ O port, and Vofs is
the zero-input-power offset
voltage. There are three
methods to calculate Vofs :
1) Vofs can be measured
before each detector
measurement (by removing or
switching off the power source
and measuring Vref − Vdet ). This
method gives an error due to
temperature drift of less than
0.01dB/50°C.
2) Vofs can be measured at a
single reference temperature.
The drift error will be less than
0.25dB.
3) Vofs can either be
characterized over temperature
and stored in a lookup table, or
it can be measured at two
temperatures and a linear fit
used to calculate Vofs at any
temperature. This method gives
an error close to the method
#1.
The RF ports are AC coupled at
the RF input to the first stage
and the RF output of the final
stage. No ground wired are
needed since ground
connections are made with
plated through-holes to the
backside of the device.
Assembly Techniques
Electrically and thermally
conductive epoxy die attach is
the preferred assembly method.
Solder die attach using flux-less
gold-tin (AuSn) solder perform
can also be used. The device
should be attached to an
electrically conductive surface
to complete the DC and RF
ground paths. The backside
metallization on the device is
gold.
It is recommended that the
electrical connection to the
bonding pads be made using
0.7-1.0mil diameter gold wire.
The microwave/millimeter
wave connection should be
kept as short as possible to
minimize inductance. For
assemblies requiring long bond
wires, multiple wires can be
attached to the RF bonding
pads.
Gold thermo-sonic wedge
bonding with 1-mil diameter Au
wire is recommended for all
bonds. Tool force should be 22
+/- 1-gram, stage temperature
should be 150 +/- 2 °C, and
ultra sonic power and duration
should be 64 +/- 1dB and 76
+/- 8mSec respectively.
Bonding pads and chip
backside moralization are gold.
For more detailed information
see Agilent Technologies’
application note #999 “GaAs
MMIC assembly and handling
guideline.
For product information and a
complete list of Agilent
contacts and distributors, please go to
our website:
www.agilent.com/semiconductors
E-mail:
Data subject to change.
Copyright © 2004 Agilent
Technologies, Inc.
This preliminary data is provided to assist you in the evaluation of product(s) currently under development. Until Agilent Technologies
releases this product for general sales, Agilent Technologies reserves the right to alter prices, specifications, features, capabilities,
functions, release dates, and remove availability of the product(s) at anytime.
Revision Date: 5/26/04
Revision Number: 4.0
5 Page | ||
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