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Número de pieza | GT30J121 | |
Descripción | TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de GT30J121 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT30J121
High Power Switching Applications
Fast Switching Applications
Unit: mm
• The 4th generation
• Enhancement-mode
• Fast switching (FS): Operating frequency up to 50 kHz (reference)
High speed: tf = 0.05 µs (typ.)
Low switching loss: Eon = 1.00 mJ (typ.)
: Eoff = 0.80 mJ (typ.)
• Low saturation voltage: VCE (sat) = 2.0 V (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
DC
1 ms
Symbol
VCES
VGES
IC
ICP
PC
Tj
Tstg
Rating
600
±20
30
60
170
150
−55 to 150
Unit
V
V
A
W
°C
°C
Thermal Characteristics
Characteristics
Thermal resistance
Symbol
Rth (j-c)
Max
0.735
Unit
°C/W
JEDEC
―
JEITA
―
TOSHIBA
2-16C1C
Weight: 4.6 g (typ.)
1 2002-04-19
1 page 10000
3000
1000
C – VCE
Cies
300
100
Common emitter
VGE = 0
30 f = 1 MHz
Tc = 25°C
10
0.1 0.3
1
3
Coes
Cres
10 30 100 300 1000
Collector-emitter voltage VCE (V)
GT30J121
500
Common emitter
RL = 10 Ω
Tc = 25°C
400
VCE, VGE – QG
20
16
300 200
300
200
VCE = 100 V
100
12
8
4
00
0 40 80 120 160 200
Gate charge QG (nC)
Safe Operating Area
100
IC max (pulsed)*
30 IC max (continuous)
50 µs*
100 µs*
10
DC operation
3
*: Single pulse
1 Tc = 25°C
Curves must be
0.3 derated linearly
with increase in
temperature.
0.1
13
10
30
1 ms*
10 ms*
100 300
Collector-emitter voltage VCE (V)
1000
Reverse Bias SOA
100
30
10
3
1
0.3 Tj ≤ 125°C
VGE = 15 V
0.1 RG = 24 Ω
1 3 10 30 100 300
Collector-emitter voltage VCE (V)
1000
rth (t) – tw
102
101
100
10−1
10−2
10−3
10−4
10−5
10−4
10−3
10−2
10−1
Tc = 25°C
100 101
102
Pulse width tw (s)
5
2002-04-19
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet GT30J121.PDF ] |
Número de pieza | Descripción | Fabricantes |
GT30J121 | TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT | Toshiba Semiconductor |
GT30J122 | 4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING | Toshiba Semiconductor |
GT30J122A | Silicon N-Channel IGBT | Toshiba |
GT30J126 | Silicon N-Channel IGBT | Toshiba |
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