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Datasheet 2N2646 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2N2646 | SILICON PN UNIJUNCTION TRANSISTORS 2N2646 2N2647
SILICON PN UNIJUNCTION TRANSISTORS
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2646 and 2N2647 devices are silicon PN Unijunction Transistors designed for general purpose industrial applications.
MARKING: FULL PART NUMBER
TO-18 (UJT) CASE
MAXIMUM RA |  Central Semiconductor | transistor |
| 2 | 2N2646 | Unijunction Transistor 2N2646 Unijunction Transistor
TO−18 Package
Description: The 2N2646 is designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits.
Features: D Low Peak Point Current: 5A (Max)
D Low Emitter Reverse Current: .005A (Typ) D Passivated Surface for Reliabilit |  NTE | transistor |
| 3 | 2N2646 | Silicon PN Unijunction Transistor |  Solid State | transistor |
| 4 | 2N2646 | Transistor Transistor
Unijunction, TO-18
Absolute Maximum Ratings:
Tj=125°C unless otherwise noted
Symbol
Ratings
VB2E Ie ie
VB2B1 PD TJ
TStg
Emitter-Base2 Voltage RMS Emitter Current Peak Pulse Emitter Current Interbase Voltage RMS power Dissipation Junction Temperature Storage Temperature
Pin Configur |  Multicomp | transistor |
| 5 | 2N2646 | SILICON UNIJUNCTION TRANSISTOR 2N2646, 2N2647
High-reliability discrete products and engineering services since 1977
SILICON UNIJUNCTION TRANSISTOR
FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), s |  Digitron Semiconductors | transistor |
2N2 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2N20 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2N20
·FEATURES ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 200V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 3.5Ω(Max) ·Fast Switching
·APPLICATIONS ·Switching power supplies,converte  Inchange Semiconductor mosfet | | |
| 2 | 2N2000 | (2N2000 / 2N2001) alloy-junction germanium transistors w
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| 3 | 2N2001 | (2N2000 / 2N2001) alloy-junction germanium transistors w
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ETC transistor | | |
| 4 | 2N2017 | Small Signal Transistors Small Signal Transistors TO-39 Case (Continued)
TYPE NO. DESCRIPTION
VCBO (V)
2N1975 NPN AMPL/SWITCH 2N1983 NPN AMPL/SWITCH 2N1984 NPN AMPL/SWITCH 2N1985 NPN AMPL/SWITCH 2N1986 NPN AMPL/SWITCH 2N1987 NPN AMPL/SWITCH 2N1988 NPN AMPL/SWITCH 2N1989 NPN AMPL/SWITCH 2N1990 NPN AMPL/SWITCH 2N2017 NPN A Central Semiconductor transistor | | |
| 5 | 2N2017 | Trans GP BJT NPN 60V 0.5A 6-Pin TO-78 New Jersey Semiconductor data | | |
| 6 | 2N2018 | Trans GP BJT NPN 60V 0.5A 6-Pin TO-78 New Jersey Semiconductor data | | |
| 7 | 2N2019 | Trans GP BJT NPN 60V 0.5A 6-Pin TO-78 New Jersey Semiconductor data | |
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