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PDF IXTH180N085T Data sheet ( Hoja de datos )
| Número de pieza | IXTH180N085T | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS Corporation | |
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TrenchMVTM
Power MOSFET
IXTH180N085T
IXTQ180N085T
N-Channel Enhancement Mode
Avalanche rated
Fast Intrinsic Rectifier
VDSS = 85V
ID25 = 180A
≤RDS(on) 5.5mΩ
TO-247
Symbol
VDSS
VDGR
VGSM
ID25
ILRMS
IDM
IA
EAS
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
Transient
TC = 25°C
Lead Current Limit, RMS
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
1.6mm (0.063in) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-247&TO-3P)
TO-247
TO-3P
Maximum Ratings
85
85
V
V
±20 V
180 A
75 A
480 A
25 A
1.0 J
430 W
-55 to +175
+175
-55 to +175
°C
°C
°C
300 °C
260 °C
1.13/10
Nm/lb.in.
6.0 g
5.5 g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = ±20V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ
RDS(on)
VGS = 10V, ID = 25A, Note 1
= 150°C
Characteristic Values
Min.
Typ.
Max.
85 V
2.0 4.0 V
±200 nA
5 μA
250 μA
4.5 5.5 mΩ
TO-3P
(TAB)
G
DS
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
International Standard Packages
175°C Operating Temperature
Avalanche Rated
Fast Intrinsic Rectifier
Low RDS(on)
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
Automotive
- Motor Drives
- DC/DC Conversion
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-Line UPS
Primary Switch for 24V and 48V
Systems
High Current Switching Applications
Distributed Power Architechtures
and VRMs
Electronic Valve Train Systems
High Voltage Synchronous Recifiers
© 2009 IXYS CORPORATION, All Rights Reserved
DS99701A(03/09)
1 page  
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
80
70 RG = 5Ω
VGS = 10V
VDS = 43V
60
50
40
30 I D = 25A
I D = 50A
20
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
140
t r td(on) - - - -
120 TJ = 125ºC, VGS = 10V
VDS = 43V
100
I D = 50A
60
56
52
80 48
I D = 25A
60 44
40 40
20 36
0 32
4 6 8 10 12 14 16 18 20
RG - Ohms
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
72
68 TJ = 125ºC
64
t f td(off) - - - -
60 RG = 5Ω, VGS = 10V
VDS = 43V
56
52
TJ = 25ºC
TJ = 25ºC
48
TJ = 125ºC
44
24 28 32 36 40 44 48
ID - Amperes
100
92
84
76
68
60
52
44
IXTH180N085T
IXTQ180N085T
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
90
TJ = 25ºC
80
70
RG = 5Ω
60 VGS = 10V
VDS = 43V
50
40
30 TJ = 125ºC
20
24 26 28 30 32 34 36 38 40 42 44 46 48 50
ID - Amperes
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
68
66 I D = 50A
94
90
64
I D = 25A
62
60 t f
td(off) - - - -
58 RG = 5Ω, VGS = 10V
56 VDS = 43V
86
82
78
74
70
54 66
52 I D = 25A, 50A
50
62
58
48 54
46 50
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
160
t f td(off) - - - -
140 TJ = 125ºC, VGS = 10V
VDS = 43V
120
I D = 25A
300
260
220
I D = 50A
100 180
80 140
60 100
40 60
4 6 8 10 12 14 16 18 20
RG - Ohms
© 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_180N085T (5V)3-04-09-D
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXTH180N085T.PDF ] | |
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