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Datasheet MJE3055T Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | MJE3055T | Complementary Silicon Plastic Power Transistors MJE2955T (PNP), MJE3055T (NPN)
Complementary Silicon Plastic Power Transistors
These devices are designed for use in general−purpose amplifier and switching applications.
Features
• High Current Gain − Bandwidth Product • These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
|  ON Semiconductor | transistor |
| 2 | MJE3055T | Power Transistors RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
See Below for
Part #
TO-220 - Power Transistors and Darlingtons
TO-220
4
12 3
Pin Config 1. Base 2. Collector 3. Emitter 4. Collector
Dimensions in millimeters
Electrical Characteristics (Ta=25oC)
Part #
Polarity VCBO VCEO VEBO (V) (V) (V)
Min Mi |  RECTRON | transistor |
| 3 | MJE3055T | NPN Transistor 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824
|  Central Semiconductor | transistor |
| 4 | MJE3055T | NPN PLASTIC POWER TRANSISTORS Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PLASTIC POWER TRANSISTORS
MJE2955T PNP MJE3055T NPN
TO-220 Plastic Package
With excellent Safe Operating Area, ideal for Hi-Fi Amplifier and Switching Regulator Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIP |  CDIL | transistor |
| 5 | MJE3055T | Complementary Silicon Power Ttransistors TIGER ELECTRONIC CO.,LTD
E Product specification
Complementary Silicon Power Ttransistors
MJE3055T / MJE2955T
DESCRIPTION
It is intented for use in power amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC)
Parameter
Symbol Value Unit
Collector-Base Voltage
VCBO 70 V
|  TGS | transistor |
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