(PDF) TM4953S Datasheet - Dual P-Channel High Density Trench MOSFET

Número de pieza	TM4953S
Descripción	Dual P-Channel High Density Trench MOSFET
Fabricantes	TECH MOS
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No Preview Available ! TECH MOS Technology. Dual P-Channel High Density Trench MOSFET TM4953S TM4953FS(Pb-free) PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max - 30V - 4.9A - 3.6A 53 @ VGS = - 10V 95 @ VGS = - 4.5V FEATURES ●Super high dense cell trench design for low RDS(on). ●Rugged and reliable. ●Surface Mount package. So-8 D1 D1 D2 D2 876 5 1 1234 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousa @ TA = 25 °C -Pulse b Drain-Source Diode Forward Currenta Maximum Power Dissipationa Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ,TSTG Limit -30 ± 20 - 4.9 - 20 - 1.7 2.0 - 55 to 150 Unit V V A A A W °C THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambienta ：Note ：a. Surface Mounted on FR4 Board , t ≤ 10sec . b. Pulse Test Pulse width ≤ 300us , Duty Cycle ≤ 2% . RthJA 62.5 °C/W DS-TM4953FS-02 Apr. , 2007 1 1 page

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PDF TM4953S Data sheet ( Hoja de datos )