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Datasheet HFH10N80 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | HFH10N80 | N-Channel MOSFET HFH10N80
Dec 2005
HFH10N80
800V N-Channel MOSFET
BVDSS = 800 V RDS(on) typ = 0.92 ȍ ID = 10 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate C |  SemiHow | mosfet |
HFH Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | HFH10N80 | N-Channel MOSFET HFH10N80
Dec 2005
HFH10N80
800V N-Channel MOSFET
BVDSS = 800 V RDS(on) typ = 0.92 ȍ ID = 10 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate C SemiHow mosfet | | |
| 2 | HFH10N90Z | N-Channel MOSFET HFH10N90Z_HFA10N90Z
Oct 2016
HFH10N90Z / HFA10N90Z
900V N-Channel MOSFET
Features
Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche Tested RoHS Compliant Built-in ESD Diode
Key SemiHow mosfet | | |
| 3 | HFH11N90 | N-Channel MOSFET HFH11N90
Dec 2005
HFH11N90
900V N-Channel MOSFET
BVDSS = 900 V RDS(on) typ ȍ ID = 11 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate C SemiHow mosfet | | |
| 4 | HFH12N60 | N-Channel Enhancement Mode Field Effect Transistor Shantou Huashan Electronic Devices Co.,Ltd.
HFH12N60
N-Channel Enhancement Mode Field Effect Transistor
█ General Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially  HUASHAN ELECTRONIC transistor | | |
| 5 | HFH13N80 | N-Channel MOSFET HFH13N80
Dec 2005
HFH13N80
800V N-Channel MOSFET
BVDSS = 800 V RDS(on) typ = 0.77 Ω ID = 12.6 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalle SemiHow mosfet | | |
| 6 | HFH18N50S | N-Channel MOSFET HFH18N50S
Nov 2009
HFH18N50S
500V N-Channel MOSFET
BVDSS = 500 V RDS(on) typ = 0.220ȍ ID = 19 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate SemiHow mosfet | | |
| 7 | HFH19N60 | N-Channel MOSFET HFH19N60
OCT 2009
HFH19N60
600V N-Channel MOSFET
BVDSS = 600 V RDS(on) typ ȍ ID = 18.5 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate SemiHow mosfet | | |
| 8 | HFH20N50 | N-Channel Enhancement Mode Field Effect Transistor Shantou Huashan Electronic Devices Co.,Ltd.
HFH20N50
N-Channel Enhancement Mode Field Effect Transistor
█ General Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially HUASHAN ELECTRONIC transistor | | |
| 9 | HFH6N90 | N-Channel MOSFET HFH6N90
Mar 2010
HFH6N90
900V N-Channel MOSFET
BVDSS = 900 V RDS(on) typ = 1.95 Ω ID = 6.0 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled G SemiHow mosfet | |
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