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PDF FDPF10N60ZUT Data sheet ( Hoja de datos )
| Número de pieza | FDPF10N60ZUT | |
| Descripción | N-Channel UniFET Ultra FRFET MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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FDPF10N60ZUT
N-Channel UniFETTM Ultra FRFETTM MOSFET
600 V, 9 A, 800 mΩ
December 2013
Features
• RDS(on) = 650 mΩ (Typ.) @ VGS = 10 V, ID = 4.5 A
• Low Gate Charge (Typ. 31 nC)
• Low Crss (Typ. 15 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
Applications
• LCD/LED/PDP TV
• Lighting
• Uninterruptible Power Supply
Description
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on advanced planar stripe and DMOS
technology. This advanced MOSFET family has the smallest
on-state resistance among the planar MOSFET, and also pro-
vides superior switching performance and higher avalanche
energy strength. In addition, internal gate-source ESD diode
allows UniFET II MOSFET to withstand over 2kV HBM surge
stress. UniFET II Ultra FRFETTM MOSFET has much superior
body diode reverse recovery performance. Its trr is less than
50nsec and the reverse dv/dt immunity is 20V/nsec while nor-
mal planar MOSFETs have over 200nsec and 4.5V/nsec
respectively. Therefore UniFET II Ultra FRFET MOSFET can
remove additional component and improve system reliability in
certain applications that require performance improvement of
the MOSFET’s body diode. This device family is suitable for
switching power converter applications such as power factor
correction (PFC), flat panel display (FPD) TV power, ATX and
electronic lamp ballasts.
D
GDS
TO-220F
G
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature.
Thermal Characteristics
S
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
©2009 Fairchild Semiconductor Corporation
FDPF10N60ZUT Rev. C1
1
FDPF10N60ZUT
600
±30
9*
5.4*
36*
100
9
18
20
42
0.3
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
FDPF10N60ZUT
3.0
62.5
Unit
oC/W
www.fairchildsemi.com
1 page  
IG = const.
Figure 11. Gate Charge Test Circuit & Waveform
V10GVS
VDS
VGS
RG
RL
VDD
VDS
90%
DUT
VGS 10%
td(on)
tr
t on
Figure 12. Resistive Switching Test Circuit & Waveforms
td(off)
tf
t off
VGS
Figure 13. Unclamped Inductive Switching Test Circuit & Waveforms
©2009 Fairchild Semiconductor Corporation
FDPF10N60ZUT Rev. C1
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FDPF10N60ZUT.PDF ] | |
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