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PDF MPS-U55 Data sheet ( Hoja de datos )
| Número de pieza | MPS-U55 | |
| Descripción | PNP Silicon Amplifier Transistor | |
| Fabricantes | New Jersey Semi-Conductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MPS-U55 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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<StmL-Conductor £A\oauc£i, Unc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
MPS-U55 (SILICON)
MPS-U56
TELEPHONE: (201)376-2922
(212)227-6005
FAX: (201) 376-8960
PNP SILICON ANNULAR
AMPLIFIER TRANSISTORS
. . . designed for general-purpose, high-voltage ampl fier and driver
applications.
• High Collector-Emitter Breakdown Voltage -
BVCEO = 60 Vdc <Min) @ lc = 1 .0 mAdc - MPS-U55
80 Vdc (Mini @ Ic = 1,0 mAdc - MPS-U56
• High Power Dissipation - Prj = 1 0 W @ TC = 25°C
• Complements to NPN MPS-U05 and MPS-U06
PNP SILICON
AMPLIFIER TRANSISTORS
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Total Device Dissipation @ TA - 25°C
Derate above 25°C
Total Device Dissipation 9 TC • 25°C
Derate above.25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCB
VEB
ic
PD
PD
Tj.Tstg
MPS-U55 MPS-U56
60 80
60 SO
4.0
2.0
1.0
8.0
10
80
-55 to 1 150
Unit
Vdc
Vdc
Vdc
Adc
Watt
mW/°C
Watts
mW/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
"JC
«JA
Max
12.5
125
Unit
°c/w
°c/w
0360
~ 0.375
— -0.190
1 T rail
Collector Connected
Quality S<=imi-Conrh.)rtor$
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MPS-U55.PDF ] | |
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