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PDF TPC6006-H Data sheet ( Hoja de datos )
| Número de pieza | TPC6006-H | |
| Descripción | Silicon N Channel MOS Type Field Effect Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TPC6006-H
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII)
TPC6006-H
Notebook PC Applications
Portable Equipment Applications
Unit: mm
• Small footprint due to small and thin package
• High-speed switching
• Small gate charge: Qsw = 2.4 nC (typ.)
• Low drain-source ON-resistance: RDS (ON) = 59 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 7 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 40 V)
• Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
(t = 5 s)
(Note 2a)
Drain power dissipation
(t = 5 s)
(Note 2b)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy (Note 4)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
EAS
IAR
EAR
Tch
Tstg
40
40
±20
3.9
15.6
2.2
0.7
7
3.9
0.22
150
−55 to 150
V
V
V
A
W
W
mJ
A
mJ
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-3T1A
Weight: 0.011 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/ ”Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Circuit Configuration
Characteristics
Symbol
Max Unit
Thermal resistance, channel to ambient
(t = 5 s)
(Note 2a)
Thermal resistance, channel to ambient
(t = 5 s)
(Note 2b)
Rth (ch-a)
Rth (ch-a)
56.8
178.5
°C/W
°C/W
Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See the next page.
This transistor is an electrostatic-sensitive device. Handle with care.
654
123
1 2007-12-20
1 page  
150
Common source
Pulse test
RDS (ON) – Ta
ID = 3.9 A
100
1.9
0.9
VGS = 4.5 V
50
VGS = 10 V
ID = 0.9 , 1.9, 3.9 A
0
−80 −40
0
40 80 120 160
Ambient temperature Ta (°C)
TPC6006-H
IDR – VDS
100
5
10 10
31
VGS = 0 V
1
Common source
Ta = 25°C
Pulse test
0.1
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
Drain-source voltage VDS (V)
Capacitance – VDS
1000
Ciss
100
Coss
Common source
VGS = 0 V
f = 1 MHz
10 Ta = 25°C
0.1
1
Crss
10
Drain-source voltage VDS (V)
100
Vth – Ta
2.5
Common source
VDS = 10 V
2
ID = 1mA
Pulse test
1.5
1
0.5
0
−80 −40
0
40 80 120 160
Ambient temperature Ta (°C)
2.5
(1) t = 5 s
2
PD – Ta
(1) Device mounted on a glass-epoxy
board (a) (Note 2a)
(2) Device mounted on a glass-epoxy
board (b) (Note 2b)
1.5
(1) DC
1
(2) t = 5 s
0.5
(2) DC
0
0 40 80 120
Ambient temperature Ta (°C)
160
Dynamic input/output
characteristics
40
35
VDD = 32V
30
Common source
ID = 3.9A
Ta = 25°C
Pulse test
25
20
16
15
VDS
VGS
8
16
VDD = 32 V
10 8
16
14
12
10
8
6
4
52
00
0 24 6
Total gate charge Qg (nC)
5 2007-12-20
5 Page | ||
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| PDF Descargar | [ Datasheet TPC6006-H.PDF ] | |
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