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PDF TPCS8004 Data sheet ( Hoja de datos )
| Número de pieza | TPCS8004 | |
| Descripción | Silicon N Channel MOS Type Field Effect Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de TPCS8004 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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TPCS8004
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
TPCS8004
High-Speed Switching Applications
Switching Regulator Applications
DC-DC Converter Applications
Unit: mm
• Small footprint due to small and thin package
• Low drain-source ON resistance: RDS (ON) = 0.56 Ω (typ.)
• High forward transfer admittance: |Yfs| = 1.8 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 200 V)
• Enhancement model: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (t = 10 s)
(Note 2a)
Drain power dissipation (t = 10 s)
(Note 2b)
Single pulse avalanche energy(Note3)
Avalanche current
Repetitive avalanche energy
(Note2a, Note 4)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
EAS
IAR
EAR
Tch
Tstg
200
200
±20
1.3
5.2
1.5
0.6
1.05
1.3
0.15
150
−55 to 150
V
V
V
A
W
mJ
A
mJ
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-3R1B
Weight: 0.035 g (typ.)
Circuit Configuration
8765
Note 1, Note 2, Note 3 and Note 4: See the next page.
This transistor is an electrostatic-sensitive device. Please handle with caution.
1234
1 2009-09-29
1 page  
TPCS8004
1.2
Common source
Pulse test
1.0
0.8
RDS (ON) – Ta
1.3 A
0.65 A
ID = 0.32 A
0
0.4
VGS = 10 V
0.2
0
−80 −40
0
40 80 120 160
Ambient temperature Ta (°C)
IDR – VDS
10
Common source
Ta = 25°C
5 Pulse test
3
1
0.5
0.3
VGS = 10 V
5V
0.1
−0.03 −0.05 −0.1
3V
0, −1 V
−0.3 −0.5 −1
Drain-source voltage VDS (V)
−3
Capacitance – VDS
1000
Ciss
100
Coss
10 Crss
Common source
Ta = 25°C
f = 1MHz
VGS = 0 V
1
0.1
1
10
Drain-source voltage VDS (V)
100
5
Common source
VDS = 10 V
4 ID = 1 mA
Pulse test
Vth – Ta
3
2
1
0
−80 −40
0
40 80 120 160
Ambient temperature Ta (°C)
2.0
1.6 (1)
1.2
PD – Ta
(1) Device mounted on a glass-epoxy board (a)
(Note 2a)
(2) Device mounted on a glass-epoxy board (b)
(Note 2b)
t = 10 s
0.8
(2)
0.4
0
0 40 80 120 160 200
Ambient temperature Ta (°C)
Dynamic input/output characteristics
160
VDS
120
80
40
16
40
80 12
VDD = 160 V
VGS
8
Common source
ID = 1.3 A
Ta = 25 °C
4
00
0 4 8 12 16
Total gate charge Qg (nC)
5 2009-09-29
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TPCS8004.PDF ] | |
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