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Número de pieza | H5N2522FP-E0-E | |
Descripción | High Speed Power Switching MOS FET | |
Fabricantes | Renesas Technology | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de H5N2522FP-E0-E (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! H5N2522FP-E0-E
250V - 12A - MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS(on) = 0.13 typ. (at ID = 6 A, VGS = 10 V, Ta = 25C)
Low leakage current
High speed switching
Built-in fast recovery diode
Outline
RENESAS Package code: PRSS0003AG-A
(Package name: TO-220FP)
1
23
Absolute Maximum Ratings
Item
Drain to Source voltage
Gate to source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Body-Drain diode reverse Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25C
3. STch = 25C, Tch 150C
G
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note2
ch-c
Tch
Tstg
Preliminary Datasheet
R07DS0862EJ0100
Rev.1.00
Jul 27, 2012
D
1. Gate
2. Drain
3. Source
S
Ratings
250
±30
12
48
12
48
12
9
35
3.57
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
R07DS0862EJ0100 Rev.1.00
Jul 27, 2012
Page 1 of 5
1 page H5N2522FP-E0-E
Package Dimensions
Package Name
TO-220FP
JEITA Package Code
RENESAS Code
PRSS0003AG-A
Previous Code
MASS[Typ.]
1.9g
10.16 ± 0.20
3.18 ± 0.10
2.54 ± 0.20
1.28 ± 0.30
Max 1.47
0.80 ± 0.20
5.08 ± 0.20
0.50
2.76 ± 0.20
Preliminary
Unit: mm
Ordering Information
Orderable Part Number
H5N2522FP-E0-E#T2
1000 pcs
Quantity
Shipping Container
Box (Tube)
R07DS0862EJ0100 Rev.1.00
Jul 27, 2012
Page 5 of 5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet H5N2522FP-E0-E.PDF ] |
Número de pieza | Descripción | Fabricantes |
H5N2522FP-E0-E | High Speed Power Switching MOS FET | Renesas Technology |
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