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PDF AOL1432A Data sheet ( Hoja de datos )
| Número de pieza | AOL1432A | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AOL1432A
N-Channel SDMOSTM POWER Transistor
General Description
Features
The AOL1432A is fabricated with SDMOSTM trench
technology that combines excellent RDS(ON) with low
gate charge. The result is outstanding efficiency with
controlled switching behavior. This universal technology
is well suited for PWM, load switching and general
purpose applications.
VDS (V) = 25V
ID = 44A
(VGS = 10V)
RDS(ON) < 7.5mΩ (VGS = 10V)
RDS(ON) <14mΩ (VGS = 4.5V)
-RoHS Compliant
-Halogen Free
100% UIS Tested!
100% R g Tested!
UltraSO-8TM Top View
S
G
D
Bottom tab
connected to
drain
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
Current A
Avalanche Current C
TA=25°C
TA=70°C
Repetitive avalanche energy L=50μH C
IDSM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
25
±20
44
31
120
12
10
35
31
30
15
2.1
1.3
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
14.2
48
3.5
Max
20
60
5
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
www.aosmd.com
1 page  
AOL1432A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
70
60
50
40 TA=25°C
30 TA=100°C
20
10
TA=150°C
TA=125°C
0
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
40
30
20
10
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 13: Power De-rating (Note B)
175
50 10000
TA=25°C
40 1000
30 17
20
100
5
2
10
10 10
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 14: Current De-rating (Note B)
1
0 0 0 0.01 0.1 1 10 0100 1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
D=Ton/T
In descending order
TJ,PK=TA+PDM.ZθJA.RθJA
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1 RθJA=60°C/W
40
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet AOL1432A.PDF ] | |
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