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PDF APT97N65LC6 Data sheet ( Hoja de datos )
| Número de pieza | APT97N65LC6 | |
| Descripción | Super Junction MOSFET | |
| Fabricantes | Microsemi | |
| Logotipo |  |
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COOLMOS
Power Semiconductors
• Ultra Low RDS(ON)
• Low Miller Capacitance
• Ultra Low Gate Charge, Qg
• Avalanche Energy Rated
• Extreme dv/dt Rated
APT97N65B2C6
APT97N65LC6
650V 97A 0.041Ω
Super Junction MOSFET
APT97N65B2C6
T-Max®
TO-264
APT97N65LC6
D
Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with
two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
G
S
MAXIMUM RATINGS
Symbol Parameter
All Ratings per die: TC = 25°C unless otherwise specified.
APT97N65B2_LC6
UNIT
VDSS
ID
IDM
VGS
PD
TJ,TSTG
TL
IAR
EAR
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C 1 (assuming Rdson max = 0.041Ω)
Continuous Drain Current @ TC = 100°C
Pulsed Drain Current 2
Gate-Source Voltage Continuous
Total Power Dissipation @ TC = 25°C
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 2
Repetitive Avalanche Energy 3 ( Id = 13.4A, Vdd = 50V )
650
97
62
291
±20
862
-55 - to 150
260
13.4
2.96
Volts
Amps
Volts
Watts
°C
Amps
EAS Single Pulse Avalanche Energy ( Id = 13.4A, Vdd = 50V )
1954
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BV(DSS) Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA)
650
RDS(on) Drain-Source On-State Resistance 4 (VGS = 10V, ID = 48.5A)
0.037 0.041
IDSS
Zero Gate Voltage Drain Current (VDS = 650V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 650V, VGS = 0V, TC = 150°C)
25
250
IGSS
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
±100
VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 2.96mA)
2.5 3 3.5
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
UNIT
Volts
Ohms
μA
nA
Volts
"COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-
mark of Infineon Technologies AG."
Microsemi Website - http://www.microsemi.com
1 page  
Typical Performance Curves
10%
td(on)
tr
5% 10%
Gate Voltage
TJ = 125°C
90% Collector Current
Collector Voltage
Switching Energy
Figure 17, Turn-on Switching Waveforms and Definitions
VDD
APT30DF60
IC VCE
G
D.U.T.
FigFuirgeu1re9,2I0n,dIuncdtuivcetivSewSitwchiticnhginTgesTteCsitrCcuirict uit
APT97N65B2_LC6
90%
td(off)
tf
Collector Current
10%
Switching Energy
Gate Voltage
TJ = 125°C
Collector Voltage
0
Figure 18, Turn-off Switching Waveforms and Definitions
T-MAX® (B2) Package Outline
TO-264 (L) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
20.80 (.819)
21.46 (.845)
e3 100% Sn Plated
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
19.51 (.768)
20.50 (.807)
5.79 (.228)
6.20 (.244)
3.10 (.122)
3.48 (.137)
25.48 (1.003)
26.49 (1.043)
4.50 (.177) Max.
0.40 (.016)
1.016(.040)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate
Drain
Source
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
2.29 (.090)
2.69 (.106)
Gate
Drain
Source
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| PDF Descargar | [ Datasheet APT97N65LC6.PDF ] | |
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