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MBR20200FCT PDF даташит

Спецификация MBR20200FCT изготовлена ​​​​«JIANGSU CHANGJIANG ELECTRONICS» и имеет функцию, называемую «SCHOTTKY BARRIER RECTIFIER».

Детали детали

Номер произв MBR20200FCT
Описание SCHOTTKY BARRIER RECTIFIER
Производители JIANGSU CHANGJIANG ELECTRONICS
логотип JIANGSU CHANGJIANG ELECTRONICS логотип 

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MBR20200FCT Даташит, Описание, Даташиты
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Diodes
MBR20100FCT, 150FCT, 200FCT
SCHOTTKY BARRIER RECTIFIER
TO-220F
FEATURES
z Schottky Barrier Chip
z Guard Ring Die Construction for Transient Protection
z Low Power Loss,High Efficiency
z High Surge Capability
1. ANODE
2. CATHODE
3. ANODE
z High Current Capability and Low Forward Voltage Drop
z For Use in Low Voltage, High Frequency Inverters,Free Wheeling,
and Polarity Protection Applications
MAXIMUM RATINGS ( Ta=25unless otherwise noted )
Symbol
Parameter
MBR20100FCT
Value
MBR20150FCT
VRRM Peak repetitive reverse voltage
VRWM Working peak reverse voltage
100 150
VR DC blocking voltage
VR(RMS) RMS reverse voltage
70 105
BDTICIO Averagerectifiedoutputcurrent
20
MBR20200FCT
200
140
Unit
V
V
A
IFSM Non-Repetitive peak forward surge current 150 A
8.3ms half sine wave
PD Power dissipation
2W
RΘJA Thermal resistance from junction to ambient
50 /W
Tj Junction temperature
125
Tstg Storage temperature
-55~+150
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Symbol
Device
Test conditions Min Typ Max Unit
Reverse voltage
V(BR)
MBR20100FCT
MBR20150FCT
MBR20200FCT
IR=1mA
100
150
200
V
Reverse current
MBR20100FCT
IR MBR20150FCT
MBR20200FCT
MBR20100FCT
VR=100V
VR=150V
VR=200V
0.1
0.1 mA
0.1
1
Forward voltage
VF1 MBR20150FCT
MBR20200FCT
MBR20100FCT
IF=10A
1V
1
1.2
VF2* MBR20150FCT
MBR20200FCT
IF=20A
1.2 V
1.2
*Pulst test www.BDTIC.com/jcst









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MBR20200FCT Даташит, Описание, Даташиты
Typical Characteristics MBR20100FCT
20000
10000
1000
100
Forward Characteristics
Reverse Characteristics
1000
100 T =100
a
10
10 1
T =25
a
1
0 100 200 300 400 500 600 700 800 900 1000
0.1
1 20 40 60 80 100
FORWARD VOLTAGE V (mV)
F
REVERSE VOLTAGE V (V)
R
Capacitance Characteristics
Power Derating Curve
400 2.5
T =25
a
f=1MHz
2.0
300
1.5
BDTIC200
1.0
100
0.5
0
0 5 10 15 20 25 30 35
REVERSE VOLTAGE V (V)
R
0.0
0
25 50 75 100
AMBIENT TEMPERATURE T ()
a
125
www.BDTIC.com/jcst E,Apr,2014










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