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MBR20200FCT PDF даташит

Спецификация MBR20200FCT изготовлена ​​​​«Gt Semi» и имеет функцию, называемую «10A/100V ~ 200V Schottky Barrier Rectifier».

Детали детали

Номер произв MBR20200FCT
Описание 10A/100V ~ 200V Schottky Barrier Rectifier
Производители Gt Semi
логотип Gt Semi логотип 

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MBR20200FCT Даташит, Описание, Даташиты
MBR20100CT thru MBR20200CT
MBR20100FCT thru MBR20200FCT
10A/100V ~ 200V Schottky Barrier Rectifier
FEATURES
—High current capability, low forward voltage
—Excellent high temperature stability
—Low power loss, and high efficiency
—High forward surge capability
—For use in low voltage, high frequency inverters,
free wheeling, and polarity protection
applications.
—RoHS compliant
MACHANICAL DATA
—Case:TO-220/TO-220F molded plastic package
—Terminal: Matte tin plated, solderable per
MIL-STD-750, Method 2026
—Molding Compound Flammability Rating:UL94-0
—High temperature soldering guaranteed:
260°C/10second
—Polarity: As marked
—Mounting position: Any
ORDERING INFORMATION
—Device:
MBR20100CT, MBR20150CT, MBR20200CT
MBR20100FCT, MBR20150FCT, MBR20200FCT
—Package: TO-220/TO-220F
—Marking: As marked
—Material: RoHS compliant
—Packing: Plastic tube
—Quantity per tube: 50pcs
PIN CONFIGURATION
APPLICATIONS
—Switching mode power supply applications
—Portable equipment battery applications
—High frequency rectification
—DC/DC converter
PACKAGE OUTLINE
REV: A
1 of 4
www.gt-semi.com









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MBR20200FCT Даташит, Описание, Даташиты
MBR20100CT thru MBR20200CT
MBR20100FCT thru MBR20200FCT
10A/100V ~ 200V Schottky Barrier Rectifier
ABSOLUTE MAXIMUM RATING (Tamb=25°C, unless otherwise specified)
Symbol
Parameter
MBR20100CT
MBR20100FCT
MBR20150CT
MBR20150FCT
MBR20200CT
MBR20200FCT
Maximum Repetitive Peak Reverse
VRRM
Voltage
100 150 200
VRWM
Working Peak Reverse Voltage
100 150 200
VDC Maximum DC Blocking Voltage
100 150 200
IF(AV)
Maximum Average Forward Rectified
Current
Total device
Per leg
20
10
Peak Forward Surge Current, 8.3ms
IFSM single half sine-wave per leg
135
Peak Repetitive Reverse Surge Current
IRRM @2.0μs, f=1kHz, TJ<125°C
3.5 3.0 2.5
dV/dt Voltage Rate of Charge
10,000
TJ Junction Temperature
150
TSTG
Junction and Storage Temperature
-50~150
Units
V
V
V
A
A
A
V/μs
°C
°C
ELECTRICAL CHARACTERISTICS (Tamb=25°C, unless otherwise specified)
Symbol
Parameter
Test
Condition
MBR20100CT
MBR20100FCT
MBR20150CT
MBR20150FCT
MBR20200CT
MBR20200FCT
Maximum Forward
VF Voltage per leg
IF = 10A
0.84
0.87
0.88
Minimum Reverse
VR Breakdown Voltage
IR=0.5mA
100
150
200
Maximum Reverse
IR Leakage Current
VR=VRWM
Ta=25°C
Ta=125°C
20
6000
20
5000
20
5000
Units
V
V
μA
REV: A
2 of 4
www.gt-semi.com









No Preview Available !

MBR20200FCT Даташит, Описание, Даташиты
MBR20100CT thru MBR20200CT
MBR20100FCT thru MBR20200FCT
10A/100V ~ 200V Schottky Barrier Rectifier
ELECTRICAL CHARACTERISTICS CURVE
REV: A
3 of 4
www.gt-semi.com










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