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MBR40100PT PDF даташит

Спецификация MBR40100PT изготовлена ​​​​«Nell Semiconductors» и имеет функцию, называемую «Dual Common Cathode High-Voltage Schottky Rectifier».

Детали детали

Номер произв MBR40100PT
Описание Dual Common Cathode High-Voltage Schottky Rectifier
Производители Nell Semiconductors
логотип Nell Semiconductors логотип 

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MBR40100PT Даташит, Описание, Даташиты
SEMICONDUCTOR
MBR40100PT Series RRooHHSS
Nell Semiconductors
Dual Common Cathode High-Voltage Schottky Rectifier,
40A (20A x 2), 100V
Available
RoHS*
COMPLIANT
FEATURES
175°C TJ operation
High frequency operation
Low forward voltage drop
High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
Guard ring for enhanced ruggedness, long
term reliability and overvoltage protection
Compliant to RoHS
Designed and qualified according to
JEDEC-JESD47
Solder bath temperature 260°C maximum, 40 s
DESCRIPTION
The MBR40100PT Schottky rectifier has been
optimized for low reverse leakage at high
temperature. The proprietary barrier technology
allows for reliable operation up to 175°C junction
temperature.
APPLICATIONS
Switching mode power supplies
DC to DC converters
Freewheeling diodes
Reverse battery protection.
MECHANICAL DATA
Case: TO-247AB (TO-3P)
Molding compound meets UL 94 V-O
flammability rating
Terminals: Mat tin plated leads, solderable per
J-STD-002 and JESD 22-B102
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
1
2
3
TO-247AB(MBR40100PT)
CPAINS2E
PIN 1 PIN 3
PRODUCT SUMMARY
lF(AV)
VR
VF at lF=20 A at 125°C
lRM max.
TJ max.
Diode variation
EAS
20A x 2
100V
0.67V
6 mA at 125°C
175°C
Dual dice
11.25 mJ
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
lF(AV)
CHARACTERISTICS
Rectangular waveform
VRRM
lFSM
tp = 8.3ms, single half sine-wave
VF 20 Apk, TJ = 125°C
TJ Range
VOLTAGE RATINGS
SYMBOL
PARAMETER
VR Maximum DC reverse voltage
VRWM
Maximum working peak reverse voltage
VDC Maximum DC blocking voltage
VALUE
20 x 2
100
300
0.67
-65 to 175
VALUE
100
UNIT
A
V
A
V
°C
UNIT
V
www.nellsemi.com
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MBR40100PT Даташит, Описание, Даташиты
SEMICONDUCTOR
MBR40100PT Series RRooHHSS
Nell Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum average
forward current
per device
per diode
lF(AV)
50% duty cycle at tc=144°C, rectangular waveform
Non-repetitive peak surge current
lFSM
Surge applied at rated load condition half wave
single phase 60 Hz
VALUE UNIT
40
A
20
300 A
Non-repetitive avalanche energy,
per diode
Repetitive avalanche current
EAS TJ = 25°C, L = 5.6mH, IAS = 2A
11.25 mJ
lAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
0.75
A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum forward voltage drop
V
(1)
FM
IF = 20A
IF = 40A
IF = 20A
IF = 40A
TJ = 25°C
TJ = 125°C
Maximum instantaneous reverse current
l
(2)
RM
TJ = 25°C
TJ = 125°C
Rated DC voltage
Maximum junction capacitance
CT
VR = 5 VDC (test signal range
100 kHz to 1 MHz) 25°C
Note
(1) Pulse test : 300 µs pulse width, 1% duty cycle
(2) Pulse test : Pulse width ≤ 40 ms
TYP.
0.72
0.85
0.63
0.74
-
2.5
MAX.
0.80
0.90
0.67
0.8
0.1
6
UNIT
V
mA
- 600 pF
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction temperature range
TJ
Maximum storage temperature range
Tstg
TEST CONDITIONS
Maximum thermal resistance,
junction to case (per diode)
RthJC DC operation
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth
and greased
Approximate weight
Mounting torque
Marking device
minimum
maximum
Case style TO-247AB
VALUE
-65 to 175
-65 to 175
UNIT
°C
1.25
0.24
°C/W
6.2
0.22
6 (5)
12 (10)
MBR40100PT
g
oz.
kgf . cm
(lbf . in)
www.nellsemi.com
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MBR40100PT Даташит, Описание, Даташиты
SEMICONDUCTOR
MBR40100PT Series RRooHHSS
Nell Semiconductors
Ordering Information Table
Device code
MBR 40 100 PT
1 234
1 - Schottky MBR series
2 - Current rating (40 = 40A, 20A x 2)
3 - Voltage ratings, 100=100V
4 - Circuit configuration, Center tap common cathode,
TO-247AB series package
BATINGS AND CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.1 Forward current derating curve
48
40
32
24
16
8
0
0 25 50 75 100 125 150 175
Case temperature(°C)
Fig.2 Maximum non-repetitive peak forward
surge current per diode
300
250
TJ = TJ Max.
8.3 ms Single Half Sine-wave
200
150
100
50
0
1 10 100
Number of cycles at 60 Hz
Fig.3 Typical instantaneous forward
characteristics per diode
Fig.4 Typical reverse characteristics
per diode
100
TJ = 175°C
10
TJ = 150°C
TJ = 125°C
1
TJ = 100°C
0.1 TJ = 25°C
0.01
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
lnstantaneous forward voltage (V)
10000
1000
100
10
TJ = 175°C
TJ = 150°C
TJ = 125°C
TJ = 100°C
1
TJ = 25°C
0.1
0.01
20 40 60 80 100
Percent of rated peak reverse voltage (%)
www.nellsemi.com
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