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C6010 PDF даташит

Спецификация C6010 изготовлена ​​​​«Toshiba» и имеет функцию, называемую «NPN Transistor - 2SC6010».

Детали детали

Номер произв C6010
Описание NPN Transistor - 2SC6010
Производители Toshiba
логотип Toshiba логотип 

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C6010 Даташит, Описание, Даташиты
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC6010
High Voltage Switching Applications
Switching Regulator Applications
DC-DC Converter Applications
2SC6010
Unit: mm
High speed switching: tf = 0.24μs (max) (IC = 0.3A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
Ta = 25°C
VCBO
VCEX
VCEO
VEBO
IC
ICP
IB
PC
600 V
600 V
285 V
8V
1.0
A
2.0
0.5 A
1.0 W
1. Base
2. Collector
3. Emitter
JEDEC
JEITA
Junction temperature
Storage temperature range
Tj 150 °C
Tstg
55 to 150
°C
TOSHIBA
Weight:
2-7D101A
g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-13
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C6010 Даташит, Описание, Даташиты
Electrical Characteristics (Ta = 25°C)
2SC6010
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
DC current gain
Collector emitter saturation voltage
Base-emitter saturation voltage
Rise time
Switching time Storage time
Fall time
Symbol
Test Condition
ICBO
IEBO
V (BR) CBO
V (BR) CEO
hFE (1)
hFE (2)
hFE (3)
VCE (sat)
VBE (sat)
VCB = 600 V, IE = 0
VEB = 8 V, IC = 0
IC = 1 mA, IB = 0
IC = 10 mA, IB = 0
VCE = 5 V, IC = 1 mA
VCE = 5 V, IC = 0.1 A
VCE = 5 V, IC = 0.2 A
IC = 0.6 A, IB = 75 mA
IC = 0.6 A, IB = 75 mA
20 μs
tr
VCC 200 V
IB1 IC
IB2 OUT-
tstg IB21 PUT
INPUT
IB1 = 20 mA, IB2 = 50 mA
tf DUTY CYCLE 1%
Min Typ. Max Unit
― ― 100 μA
― ― 100 μA
600
V
285
V
80 200
100 200
60 ― ―
― ― 1.0 V
― ― 1.3 V
― ― 0.4
― ― 3.0 μs
― ― 0.24
Marking
C6010
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2 2006-11-13
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C6010 Даташит, Описание, Даташиты
1.0
200
0.8
0.6
IC – VCE
150
100
80
60
40
20
0.4
IB = 5 mA
0.2
Common emitter
Ta=25
Pulse test
0
0 0.4 0.8 1.2 1.6 2
Collector-emitter voltage VCE (V)
1000
Common emitter
VCE = 5 V
Pulse test
hFE – IC
Ta = 100°C
100
25 55
10
1
0.001
0.01
0.1
Collector current IC (A)
1
2SC6010
2.0 Common emitter
Ta=25
Pulse test
1.6
40
1.2
IC – VCE
60 80
200
150
100
0.8
20
10
0.4
IB = 5 mA
0
0 2 4 6 8 10
Collector-emitter voltage VCE (V)
VCE (sat) – IC
10
Common emitter
β= 8
Pulse test
1
0.1
0.01
0.001
Ta = 100°C
25
55
0.01
0.1
Collector current IC (A)
1
VBE (sat) – IC
10
Common emitter
IC/IB = 8
Pulse test
1 Ta = 55°C
100
25
0.1
0.001
0.01
0.1
Collector current IC (A)
1.0
Common emitter
VCE = 5 V
Pulse test
0.8
IC – VBE
0.6
Ta = 100°C
0.4 55
0.2
25
1
0
0
0.2 0.4 0.6 0.
1.0 1.2
Base-emitter voltage VBE (V)
3 2006-11-13
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