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BAS70 PDF даташит

Спецификация BAS70 изготовлена ​​​​«Philips» и имеет функцию, называемую «Schottky barrier (double) diodes».

Детали детали

Номер произв BAS70
Описание Schottky barrier (double) diodes
Производители Philips
логотип Philips логотип 

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BAS70 Даташит, Описание, Даташиты
DISCRETE SEMICONDUCTORS
DATA SHEET
age
M3D088
M3D071
BAS70 series
Schottky barrier (double) diodes
Product specification
Supersedes data of 1996 Oct 01
1999 Jun 01









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BAS70 Даташит, Описание, Даташиты
Philips Semiconductors
Schottky barrier (double) diodes
Product specification
BAS70 series
FEATURES
Low forward current
High breakdown voltage
Guard ring protected
Small plastic SMD package
Low diode capacitance.
APPLICATIONS
Ultra high-speed switching
Voltage clamping
Protection circuits.
PINNING
DESCRIPTION
PIN SOT23 SOT143B
BAS70 BAS70-04 BAS70-05 BAS70-06 BAS70-07
(see Fig.1b) (see Fig.1c) (see Fig.1d) (see Fig.1e) (see Fig.2)
1 a1
2 n.c.
3 k1
4
a1
k2
k1, a2
a1
a2
k1, k2
k1
k2
a1, a2
k1
k2
a2
a1
DESCRIPTION
Planar Schottky barrier diodes with an
integrated guard ring for stress
protection. Single diodes and double
diodes with different pinning are
available.
The diodes BAS70, BAS70-04,
BAS70-05 and BAS70-06 are
encapsulated in a SOT23 small
plastic SMD package. The BAS70-07
is encapsulated in a SOT143B small
plastic SMD package.
MARKING
TYPE NUMBER
BAS70
BAS70-04
BAS70-05
BAS70-06
BAS70-07
MARKING
CODE(1)
73p
74p
75p
76p
77p
Note
1. = -: Made in Hong Kong.
= t: Made in Malaysia.
handbook, 2 columns
3
1
Top view
2
MGC482
a. Simplified outline SOT23.
handbook, 2 columns
3
12
n.c.
MGC483
b. BAS70 single diode.
handbook, 2 columns
3
12
MGC485
c. BAS70-04
handbook, 2 columns
3
12
MGC484
d. BAS70-05.
handbook, 2 columns
3
12
MGC486
e. BAS70-06.
Fig.1 Simplified outline (SOT23) and symbols.
handbook, halfpage 4
3
43
1999 Jun 01
1
Top view
2
12
MAM194
Fig.2 Simplified outline (SOT143B) BAS70-07 and symbol.
2









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BAS70 Даташит, Описание, Даташиты
Philips Semiconductors
Schottky barrier (double) diodes
Product specification
BAS70 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
Per diode
VR
IF
IFRM
IFSM
Tstg
Tj
Tamb
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
storage temperature
junction temperature
operating ambient temperature
tp 1 s; δ ≤ 0.5
tp < 10 ms
MIN. MAX. UNIT
70 V
70 mA
70 mA
100 mA
65 +150 °C
150 °C
65 +150 °C
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
Per diode
VF forward voltage
IR reverse current
τ charge carrier life time (Krakauer
method)
Cd diode capacitance
Note
1. Pulse test: tp = 300 µs; δ = 0.02.
CONDITIONS
see Fig.3
IF = 1 mA
IF = 10 mA
IF = 15 mA
VR = 50 V; note 1; see Fig.4
VR = 70 V; note 1; see Fig.4
IF = 5 mA
f = 1 MHz; VR = 0; see Fig.6
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Refer to SOT23 or SOT143B standard mounting conditions.
CONDITIONS
MAX. UNIT
410 mV
750 mV
1V
100 nA
10 µA
100 ps
2 pF
VALUE UNIT
500 K/W
1999 Jun 01
3










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