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BAT54 PDF даташит

Спецификация BAT54 изготовлена ​​​​«Philips» и имеет функцию, называемую «Schottky barrier (double) diodes».

Детали детали

Номер произв BAT54
Описание Schottky barrier (double) diodes
Производители Philips
логотип Philips логотип 

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BAT54 Даташит, Описание, Даташиты
DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D088
BAT54 series
Schottky barrier (double) diodes
Product specification
Supersedes data of 2001 Oct 12
2002 Mar 04









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BAT54 Даташит, Описание, Даташиты
Philips Semiconductors
Schottky barrier (double) diodes
Product specification
BAT54 series
FEATURES
Low forward voltage
Guard ring protected
Small plastic SMD package.
APPLICATIONS
Ultra high-speed switching
Voltage clamping
Protection circuits
Blocking diodes.
PINNING
DESCRIPTION
PIN
BAT54 BAT54A BAT54C BAT54S
1a
2 n.c.
3k
k1
k2
a1, a2
a1
a2
k1, k2
a1
k2
k1, a2
handbook, 2 columns
3
DESCRIPTION
Planar Schottky barrier diodes encapsulated in a SOT23
small plastic SMD package. Single diodes and double
diodes with different pinning are available.
MARKING
TYPE NUMBER
BAT54
BAT54A
BAT54C
BAT54S
MARKING CODE(1)
L4
L42 or V3
L43 or W1
L44 or V4
Note
1. = p : Made in Hong Kong.
= t : Made in Malaysia.
= W: Made in China.
12
Top view
MGC421
Fig.1 Simplified outline (SOT23) and pin
configuration.
3
1
(1) BAT54
2
n.c.
MLC357
3
12
MLC360
(2) BAT54A
3
12
MLC359
(3) BAT54C
3
12
MLC358
(4) BAT54S
Fig.2 Diode configuration and symbol.
2002 Mar 04
2









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BAT54 Даташит, Описание, Даташиты
Philips Semiconductors
Schottky barrier (double) diodes
Product specification
BAT54 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
Per diode
VR continuous reverse voltage
IF continuous forward current
IFRM repetitive peak forward current
IFSM non-repetitive peak forward current
Tstg storage temperature
Tj junction temperature
Per device
Ptot total power dissipation
tp 1 s; δ ≤ 0.5
tp < 10 ms
Tamb 25 °C
MIN. MAX. UNIT
30 V
200 mA
300 mA
600 mA
65 +150 °C
125 °C
230 mW
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
thermal resistance from junction to
ambient
Note
1. Refer to SOT23 standard mounting conditions.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
Per diode
VF forward voltage
IR reverse current
trr reverse recovery time
Cd diode capacitance
CONDITIONS
MAX.
UNIT
see Fig.3
IF = 0.1 mA
IF = 1 mA
IF = 10 mA
IF = 30 mA
IF = 100 mA
VR = 25 V; see Fig.4
when switched from IF = 10 mA
to IR = 10 mA; RL = 100 ;
measured at IR = 1 mA;
see Fig.6
f = 1 MHz; VR = 1 V; see Fig.5
240
320
400
500
800
2
5
10
mV
mV
mV
mV
mV
µA
ns
pF
2002 Mar 04
3










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