DataSheet26.com

1N4448WS PDF даташит

Спецификация 1N4448WS изготовлена ​​​​«Vishay» и имеет функцию, называемую «Small Signal Fast Switching Diode».

Детали детали

Номер произв 1N4448WS
Описание Small Signal Fast Switching Diode
Производители Vishay
логотип Vishay логотип 

5 Pages
scroll

No Preview Available !

1N4448WS Даташит, Описание, Даташиты
www.vishay.com
1N4448WS
Vishay Semiconductors
Small Signal Fast Switching Diode
MECHANICAL DATA
Case: SOD-323
Weight: approx. 4.3 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
• Silicon epitaxial planar diode
• Fast switching diodes
• AEC-Q101 qualified
• Base P/N-E3 - RoHS-compliant, commercial
grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101
qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PARTS TABLE
PART
ORDERING CODE
1N4448WS
1N4448WS-E3-08 or 1N4448WS-E3-18
1N4448WS-HE3-08 or 1N4448WS-HE3-18
INTERNAL CONSTRUCTION TYPE MARKING
Single diode
A3
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Reverse voltage
Repetitive peak reverse voltage
Average rectified current half wave rectification
with resistive load (1)
f 50 Hz
VR
VRRM
IF(AV)
Surge forward current
Power dissipation (1)
t < 1 s and Tj = 25 °C
IFSM
Ptot
VALUE
75
100
150
350
200
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Thermal resistance junction to ambient air (1)
Junction temperature
Storage temperature range
Operating temperature range
RthJA
Tj
Tstg
Top
Note
(1) Valid provided that electrodes are kept at ambient temperature.
VALUE
650
150
- 65 to + 150
- 55 to + 150
UNIT
V
V
mA
mA
mW
UNIT
K/W
°C
°C
°C
Rev. 1.2, 14-May-13
1 Document Number: 81387
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000









No Preview Available !

1N4448WS Даташит, Описание, Даташиты
www.vishay.com
1N4448WS
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
Forward voltage
Leakage curent
Diode capacitance
Reverse recovery time
IF = 5 mA
IF = 100 mA
VR = 20 V
VR = 75 V
VR = 20 V, Tj = 150 °C
VF = VR = 0 V
IF = 10 mA, iR = 1 mA, VR = 6 V,
RL = 100
VF
VF
IR
IR
IR
CD
trr
0.620
MAX.
0.720
1
25
5
50
4
4
UNIT
V
V
nA
μA
μA
pF
ns
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
103 250
102 Tj = 100 °C
Tj = 25 °C
10
200
150
1
10- 1
10- 2
0
1
18105
VF (V)
Fig. 1 - Forward Characteristics
2
100
50
0
0
20324
50 100 150 200
Tamb - Ambient Temperature (°C)
Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature
104
5 Tj = 25 °C
f = 1 kHz
2
103
5
2
102
5
2
10
5
2
17438
10-2
10-1 1
10
IF (mA)
102
Fig. 2 - Dynamic Forward Resistance vs. Forward Current
1.1 Tj = 25 °C
f = 1 MHz
1.0
0.9
0.8
0.7
0 2 4 6 8 10
17440
VR (V)
Fig. 4 - Relative Capacitance vs. Reverse Voltage
Rev. 1.2, 14-May-13
2 Document Number: 81387
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000









No Preview Available !

1N4448WS Даташит, Описание, Даташиты
www.vishay.com
1N4448WS
Vishay Semiconductors
104
5
2
103
5
2
102
5
2
10
5 VR = 20 V
2
1
17441
0
100
Tj (°C)
200
Fig. 5 - Leakage Current vs. Junction Temperature
100
5
4
3
2
10
5
4
3
0.1
2 0.2
1 0.5
5
4
3
2
0.1
10-5
2
17442
n=0
I
n = t /T T = 1/f
PP
I
FRM
t
P
T
t
5 10-4
2
5 10-3
2
5 10-2
2
5 10-1
2
5
tP (s)
Fig. 6 - Admissible Repetitive Peak Forward Current vs. Pulse Duration
1
2
5 10
Rev. 1.2, 14-May-13
3 Document Number: 81387
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000










Скачать PDF:

[ 1N4448WS.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
1N4448WFAST SWITCHING SURFACE MOUNT DIODETRSYS
TRSYS
1N4448WSURFACE MOUNT FAST SWITCHING DIODEWon-Top Electronics
Won-Top Electronics
1N4448WFAST SWITCHING SURFACE MOUNT DIODEDiodes Incorporated
Diodes Incorporated
1N4448WSmall Signal DiodesGeneral Semiconductor
General Semiconductor

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск