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1N4448W PDF даташит

Спецификация 1N4448W изготовлена ​​​​«Taiwan Semiconductor» и имеет функцию, называемую «400mW High Speed SMD Switching Diode».

Детали детали

Номер произв 1N4448W
Описание 400mW High Speed SMD Switching Diode
Производители Taiwan Semiconductor
логотип Taiwan Semiconductor логотип 

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1N4448W Даташит, Описание, Даташиты
Small Signal Diode
1N4148W/1N4448W/1N914BW
400mW High Speed SMD Switching Diode
SOD-123F
B
Features
—Fast switching device(Trr<4.0nS)
—Surface device type mounting
—Moisture sensitivity level 1
—Matte Tin(Sn) lead finish with Nickel(Ni) underplate
—Pb free version and RoHS compliant
—Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
Mechanical Data
—Case : Flat lead SOD-123 small outline plastic package
—Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
—High temperature soldering guaranteed: 260 °C/10s
—Polarity : Indicated by cathode band
—Weight : 8.85±0.5 mg
—Marking Code : D1, D2, D3
CA
D
E
F
Dimensions
A
B
C
D
E
F
Unit (mm) Unit (inch)
Min
1.5
3.3
0.5
2.5
0.8
0.05
Max Min Max
1.7 0.059 0.067
3.7 0.130 0.146
0.7 0.020 0.028
2.7 0.098 0.106
1.0 0.031 0.039
0.2 0.002 0.008
Ordering Information
Pin Configuration
Package
Part No.
SOD-123F 1N4148W RH
SOD-123F 1N4448W RH
SOD-123F 1N9148B RH
SOD-123F 1N4148W RHG
SOD-123F 1N4448W RHG
SOD-123F 1N9148B RHG
Packing
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
Marking
D1
D2
D3
D1
D2
D3
Suggested PAD Layout
0.91
0.036
2.36
0.093
1.22
0.048
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
4.19
0.165
Maximum Ratings
Type Number
Power Dissipation
Non-Repetitive Peak Reverse Voltage
Repetitive Peak Reverse Voltage
Repetitive Peak Forward Current
Mean Forward Current
Thermal Resistance (Junction to Ambient) (Note 1)
Junction and Storage Temperature Range
Symbol
PD
VRSM
VRRM
IFRM
IO
RθJA
TJ, TSTG
Value
400
100
75
300
150
450
-65 to + 150
Notes:1. Test Condition : 8.3ms Single half Sine-Wave Superimposed on Rated Load (JEDEC Method)
Units
mW
V
V
mA
mA
°C/W
°C
Version : D10









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1N4448W Даташит, Описание, Даташиты
Small Signal Diode
1N4148W/1N4448W/1N914BW
400mW High Speed SMD Switching Diode
Electrical Characteristics
Type Number
Symbol
Reverse Breakdown Voltage
IR= 100uA
IR= 5uA
V(BR)
Forward Voltage
1N4448W, 1N914BW
1N4148W
IF= 5.0mA
IF= 10.0mA
VF
1N4448W, 1N914BW
IF= 100.0mA
Reverse Leakage Current
VR= 20V
VR= 75V
IR
Junction Capacitance
VR=0, f=1.0MHz
CJ
Reverse Recovery Time (Note 2)
Trr
Notes:2. Reverse Recovery Test Conditions: IF=10mA, IR=60mA, RL=100Ω, IRR=1mA
Min
100
75
0.62
-
-
-
-
-
-
Max
-
-
0.72
1.0
1.0
25
5.0
4.0
4.0
Units
V
V
nA
μA
pF
ns
Tape & Reel specification
TSC label
Top Cover Tape
Carieer Tape
Any Additional Label (If Required)
d
T
A
P1 P0
CB
E
F
W
Item
Carrier width
Carrier length
Carrier depth
Sprocket hole
Reel outside diameter
Reel inner diameter
Feed hole width
Sprocke hole position
Punch hole position
Sprocke hole pitch
Embossment center
Overall tape thickness
Tape width
Reel width
Symbol
A
B
C
d
D
D1
D2
E
F
P0
P1
T
W
W1
Dimension
1.85 ± 0.10
3.94 ± 0.10
1.50 ±0.10
1.5 ± 0.1
178 ± 1
55 Min
13.0 ± 0.20
1.75 ±0.10
3.50 ±0.05
4.00 ±0.10
2.00 ±0.05
0.23 ± 0.05
8.00 ±0.20
14.4 Max
W1
D D2 D1
Version : D10









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1N4448W Даташит, Описание, Даташиты
Small Signal Diode
Rating and Sharacteristic Curves
1N4148W/1N4448W/1N914BW
400mW High Speed SMD Switching Diode
FIG 1 Typical Forward Characteristics
100
10
1
Ta=25°C
0.1
0.01
0.001
0
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
Instantaneous Forward Volatge (V)
FIG 3 Admissible Power Dissipation Curve
500
400
300
200
100
0
0 20 40 60 80 100 120 140 160
Ambient Temperature (°C)
FIG 2 Reverse Current vs Reverse Voltage
100
10 Ta=25°C
1
0.1
0.01
0
6
5
4
3
2
1
0
0
20 40 60 80 100 120
Reverse Volatge (V)
FIG 4 Typical Junction Capacitance
2468
Reverse Voltage (V)
10
10000
FIG 5 Forward Resistance vs. Forward Current
1000
100
10
1
0 0 1 10 100
Forward Current (mA)
Version : D10










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