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BAV19WS PDF даташит

Спецификация BAV19WS изготовлена ​​​​«Galaxy Microelectronics» и имеет функцию, называемую «Silicon Epitaxial Planar Diode».

Детали детали

Номер произв BAV19WS
Описание Silicon Epitaxial Planar Diode
Производители Galaxy Microelectronics
логотип Galaxy Microelectronics логотип 

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BAV19WS Даташит, Описание, Даташиты
Production specification
Silicon Epitaxial Planar Diode BAV19WS/BAV20WS/BAV21WS
FEATURES
z Fast Switching Speed
z Surface Mount Package Ideally Suited For
Pb
Lead-free
Automatic Insertion
z For General Purpose Switching Applications
z High Conductance
APPLICATIONS
z Surface mount fast switching diode
ORDERING INFORMATION
Type No.
Marking
BAV19WS
BAV20WS
BAV21WS
A8
T2
T3
SOD-323
Package Code
SOD-323
SOD-323
SOD-323
MAXIMUM RATING @ Ta=25unless otherwise specified
Characteristic
Symbol BAV19WS BAV20WS
Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Reverse Voltage
RMS Reverse Voltage
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current
VRRM
VRWM
VR
VR(RMS)
Io
120
100
71
200
200
150
106
@t=1.0 μs IFSM
@t=1.0 s
2.5
0.5
Repetitive Peak Forward Surge Current
Power Dissipation
Thermal Resistance Junction to Ambient Air
Operating and Storage Temperature Rage
IFRM
Pd
RθJA
Tj,TSTG
625
200
625
-65 to +150
BAV21WS Unit
250 V
200 V
141 V
mA
A
mA
mW
/W
B018
Rev.A
www.gmicroelec.com
1









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BAV19WS Даташит, Описание, Даташиты
Production specification
Silicon Epitaxial Planar Diode BAV19WS/BAV20WS/BAV21WS
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified
Characteristic
Reverse Breakdown Voltage
BAV19WS
BAV20WS
BAV21WS
Forward Voltage
Symbol
V(BR)R
VFM
Reverse Current BAV19WS
BAV20WS
BAV21WS
Capacitance between
terminals
Reverse Recovery Time
IR
CT
trr
Min Max Unit
120
200
V
250
- 1.0 V
1.25
- 0.1 μA
0.1
0.1
- 5 pF
- 50 ns
Test Condition
IR=100uA
IF=100mA
IF=200mA
VR=100V
VR=150V
VR=200V
VR=0,f=1.0MHz
IF=IR=30mA,
Irr=0.1×IR,RL=100
B018
Rev.A
www.gmicroelec.com
2









No Preview Available !

BAV19WS Даташит, Описание, Даташиты
Production specification
Silicon Epitaxial Planar Diode BAV19WS/BAV20WS/BAV21WS
TYPICAL CHARACTERISTICS @ Ta=25unless otherwise specified
B018
Rev.A
www.gmicroelec.com
3










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