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BAV70W PDF даташит

Спецификация BAV70W изготовлена ​​​​«Philips» и имеет функцию, называемую «High-speed double diode».

Детали детали

Номер произв BAV70W
Описание High-speed double diode
Производители Philips
логотип Philips логотип 

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BAV70W Даташит, Описание, Даташиты
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D102
BAV70W
High-speed double diode
Product specification
Supersedes data of 1997 Dec 08
1999 May 05









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BAV70W Даташит, Описание, Даташиты
Philips Semiconductors
High-speed double diode
Product specification
BAV70W
FEATURES
Very small plastic SMD package
High switching speed: max. 4 ns
Continuous reverse voltage:
max. 70 V
Repetitive peak reverse voltage:
max. 75 V
Repetitive peak forward current:
max. 500 mA.
APPLICATIONS
High-speed switching in e.g.
surface mounted circuits.
DESCRIPTION
The BAV70W consists of two
high-speed switching diodes with
common cathodes, fabricated in
planar technology, and encapsulated
in the very small SOT323 plastic SMD
package.
PINNING
PIN
1
2
3
DESCRIPTION
anode (a1)
anode (a2)
common cathode
handbook, halfpage
3
3
12
1
Top view
2
MAM382
Marking code: A4.
Fig.1 Simplified outline (SOT323; SC-70) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
Per diode
VRRM
VR
IF
IFRM
IFSM
Ptot
Tstg
Tj
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward
current
total power dissipation
storage temperature
junction temperature
single diode loaded; note 1; see Fig.2
double diode loaded; note 1; see Fig.2
square wave; Tj = 25 °C prior to surge;
see Fig.4
t = 1 µs
t = 1 ms
t=1s
Tamb = 25 °C; note 1
65
Note
1. Device mounted on an FR4 printed-circuit board.
MAX. UNIT
85 V
75 V
175 mA
100 mA
500 mA
4
1
0.5
200
+150
150
A
A
A
mW
°C
°C
1999 May 05
2









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BAV70W Даташит, Описание, Даташиты
Philips Semiconductors
High-speed double diode
Product specification
BAV70W
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
Per diode
VF forward voltage
IR reverse current
Cd diode capacitance
trr reverse recovery time
Vfr forward recovery voltage
CONDITIONS
MAX.
UNIT
see Fig.3
IF = 1 mA
IF = 10 mA
IF = 50 mA
IF = 150 mA
see Fig.5
VR = 25 V
VR = 75 V
VR = 25 V; Tj = 150 °C
VR = 75 V; Tj = 150 °C
f = 1 MHz; VR = 0; see Fig.6
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 ;
measured at IR = 1 mA; see Fig.7
when switched from IF = 10 mA;
tr = 20 ns; see Fig.8
715
855
1
1.25
30
2.5
60
100
1.5
4
1.75
mV
mV
V
V
nA
µA
µA
µA
pF
ns
V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
Note
1. Device mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
300
625
UNIT
K/W
K/W
1999 May 05
3










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