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BAV70T PDF даташит

Спецификация BAV70T изготовлена ​​​​«Philips» и имеет функцию, называемую «High-speed double diode».

Детали детали

Номер произв BAV70T
Описание High-speed double diode
Производители Philips
логотип Philips логотип 

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BAV70T Даташит, Описание, Даташиты
www.DataSheet4U.com
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D173
BAV70T
High-speed double diode
Product specification
File under Discrete Semiconductors, SC01
1997 Dec 19









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BAV70T Даташит, Описание, Даташиты
Philips Semiconductors
High-speed double diode
Product specification
BAV70T
FEATURES
Very small plastic SMD package
High switching speed: max. 4 ns
Continuous reverse voltage:
max. 75 V
Repetitive peak reverse voltage:
max. 85 V
Repetitive peak forward current:
max. 500 mA.
APPLICATIONS
High-speed switching in e.g.
surface mounted circuits.
DESCRIPTION
Two high-speed switching diodes in a
common cathode configuration,
fabricated in planar technology, in a
very small rectangular SMD SOT416
(SC-75) package.
PINNING
PIN
1
2
3
DESCRIPTION
anode 1
anode 2
common cathode
handbook, halfpage
3
3
1
1 2 MAM368
2
Marking code: A4.
Fig.1 Simplified outline (SOT416; SC-75) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
Per diode (unless otherwise specified)
VRRM
VR
IF
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
IFRM repetitive peak forward current
IFSM non-repetitive peak forward current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Ts = 90 °C; see Fig.2
single diode loaded
both diodes loaded
square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs
t = 1 ms
t=1s
Ts = 90 °C; one diode loaded
MIN. MAX. UNIT
85 V
75 V
150 mA
75 mA
500 mA
4A
1A
0.5 A
170 mW
65 +150 °C
+150 °C
1997 Dec 19
2









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BAV70T Даташит, Описание, Даташиты
Philips Semiconductors
High-speed double diode
Product specification
BAV70T
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
Per diode
VF forward voltage
IR reverse current
Cd diode capacitance
trr reverse recovery time
Vfr forward recovery voltage
CONDITIONS
MAX. UNIT
see Fig.3
IF = 1 mA
IF = 10 mA
IF = 50 mA
IF = 150 mA
see Fig.5
0.715
0.855
1
1.25
VR = 25 V
30
VR = 75 V
2
VR = 25 V; Tj = 150 °C
60
VR = 75 V; Tj = 150 °C
100
VR = 0; f = 1 MHz; see Fig.6
1.5
switching from IF = 10 mA to IR = 10 mA;
4
RL = 100 ; measured at IR = 1 mA; see Fig.7
switched to IF = 10 mA; tr = 20 ns; see Fig.8 1.75
V
V
V
V
nA
µA
µA
µA
pF
ns
V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-s
thermal resistance from junction to soldering point one diode loaded
VALUE
350
UNIT
K/W
1997 Dec 19
3










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