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BAV70-G PDF даташит

Спецификация BAV70-G изготовлена ​​​​«Vishay» и имеет функцию, называемую «Small Signal Switching Diode».

Детали детали

Номер произв BAV70-G
Описание Small Signal Switching Diode
Производители Vishay
логотип Vishay логотип 

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BAV70-G Даташит, Описание, Даташиты
www.vishay.com
BAV70-G
Vishay Semiconductors
Small Signal Switching Diode, Dual
3
1
18108
MECHANICAL DATA
Case: SOT-23
Weight: approx. 8.1 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
2
FEATURES
• Silicon Epitaxial Planar Diode
• Fast switching dual diode with common cathode
• AEC-Q101 qualified
• Base P/N-G3 - green, commercial grade
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
PARTS TABLE
PART
BAV70-G
ORDERING CODE
BAV70-G3-08 or BAV70-G3-18
INTERNAL CONSTRUCTION TYPE MARKING
Dual diodes common cathode
JJG
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Peak reverse voltage
Reverse voltage
Forward current (continuous)
Non repetitive peak forward current
Power dissipation (1)
tp = 1 μs
tp = 1 ms
tp = 1 s
VRRM
VR
IF
IFSM
IFSM
IFSM
Ptot
Note
(1) Device on fiberglass substrate
VALUE
70
70
250
2
1
0.5
350
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Thermal resistance junction to ambient air (1)
Junction temperature
Storage temperature range
Operating temperature range
RthJA
Tj
Tstg
Top
Note
(1) Device on fiberglass substrate
VALUE
430
150
- 65 to + 150
- 55 to + 150
UNIT
V
V
mA
A
A
A
mW
UNIT
K/W
°C
°C
°C
Rev. 1.0, 16-May-13
1 Document Number: 85420
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000









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BAV70-G Даташит, Описание, Даташиты
www.vishay.com
BAV70-G
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
Forward voltage
Reverse current
Diode capacitance
Reverse recovery time
IF = 1 mA
IF = 10 mA
IF = 50 mA
IF = 150 mA
VR = 70 V
VR = 70 V, Tj = 150 °C
VR = 25 V, Tj = 150 °C
VR = 0 V, f = 1 MHz
IF = 10 mA to iR = 1 mA,
VR = 6 V, RL = 100
VF
VF
VF
VF
IR
IR
IR
CD
trr
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1000
100
Tj = 100 °C
10
1
25 °C
0.1
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
14356
VF - Forward Voltage (V)
Fig. 1 - Forward Current vs. Forward Voltage
MAX.
0.715
0.855
1
1.25
2500
50
30
1.5
6
UNIT
V
V
V
V
nA
μA
μA
pF
ns
102
101
/
FM
100
D = 0.005
0.01
0.02
0.05
0.1
0.2
10-1
10-2
10-6
22290
10-5
D=
tp
T
10-4 10-3
tp
T
10-2
10-1 s 10-0
t
Fig. 2 - Peak forward current/FM = f (tp)
Rev. 1.0, 16-May-13
2 Document Number: 85420
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000









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BAV70-G Даташит, Описание, Даташиты
www.vishay.com
PACKAGE DIMENSIONS in millimeters (inches): SOT-23
3.1 (0.122)
2.8 (0.110)
BAV70-G
Vishay Semiconductors
0.550 ref. (0.022 ref.)
0.45 (0.018)
0.35 (0.014)
0.45 (0.018)
0.35 (0.014)
0.45 (0.018)
0.35 (0.014)
0.5 (0.020)
0.3 (0.012)
2.6 (0.102)
2.35 (0.093)
Foot print recommendation:
0.7 (0.028)
1 (0.039)
0.9 (0.035)
Document no.: 6.541-5014.01-4
Rev. 8 - Date: 23.Sept.2009
17418
1 (0.039)
0.9 (0.035)
0.95 (0.037)
0.95 (0.037)
Rev. 1.0, 16-May-13
3 Document Number: 85420
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000










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