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BAV99 PDF даташит

Спецификация BAV99 изготовлена ​​​​«Philips» и имеет функцию, называемую «High-speed double diode».

Детали детали

Номер произв BAV99
Описание High-speed double diode
Производители Philips
логотип Philips логотип 

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BAV99 Даташит, Описание, Даташиты
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BAV99
High-speed double diode
Product specification
Supersedes data of 1996 Sep 17
1999 May 11









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BAV99 Даташит, Описание, Даташиты
Philips Semiconductors
High-speed double diode
Product specification
BAV99
FEATURES
Small plastic SMD package
High switching speed: max. 4 ns
Continuous reverse voltage:
max. 75 V
Repetitive peak reverse voltage:
max. 85 V
Repetitive peak forward current:
max. 450 mA.
APPLICATIONS
High-speed switching in thick and
thin-film circuits.
DESCRIPTION
The BAV99 consists of two
high-speed switching diodes
connected in series, fabricated in
planar technology, and encapsulated
in the small SOT23 plastic SMD
package.
PINNING
PIN
1
2
3
DESCRIPTION
anode
cathode
common connection
handbook, halfpa2ge
1
2
3
1
3
MAM232
Marking code: A7p = made in Hong Kong; A7t = made in Malaysia.
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
Per diode
VRRM
VR
IF
IFRM
IFSM
Ptot
Tstg
Tj
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
total power dissipation
storage temperature
junction temperature
single diode loaded; see Fig.2;
note 1
double diode loaded; see Fig.2;
note 1
square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs
t = 1 ms
t=1s
Tamb = 25 °C; note 1
Note
1. Device mounted on an FR4 printed-circuit board.
MIN.
65
MAX.
85
75
215
125
450
4
1
0.5
250
+150
150
UNIT
V
V
mA
mA
mA
A
A
A
mW
°C
°C
1999 May 11
2









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BAV99 Даташит, Описание, Даташиты
Philips Semiconductors
High-speed double diode
Product specification
BAV99
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
Per diode
VF forward voltage
IR reverse current
Cd diode capacitance
trr reverse recovery time
Vfr forward recovery voltage
CONDITIONS
MAX.
UNIT
see Fig.3
IF = 1 mA
IF = 10 mA
IF = 50 mA
IF = 150 mA
see Fig.5
VR = 25 V
VR = 75 V
VR = 25 V; Tj = 150 °C
VR = 75 V; Tj = 150 °C
f = 1 MHz; VR = 0; see Fig.6
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 ;
measured at IR = 1 mA; see Fig.7
when switched from IF = 10 mA;
tr = 20 ns; see Fig.8
715
855
1
1.25
30
1
30
50
1.5
4
1.75
mV
mV
V
V
nA
µA
µA
µA
pF
ns
V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient note 1
Note
1. Device mounted on an FR4 printed-circuit board.
VALUE
360
500
UNIT
K/W
K/W
1999 May 11
3










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