DataSheet26.com

BAV99S PDF даташит

Спецификация BAV99S изготовлена ​​​​«Philips» и имеет функцию, называемую «High-speed double diode».

Детали детали

Номер произв BAV99S
Описание High-speed double diode
Производители Philips
логотип Philips логотип 

12 Pages
scroll

No Preview Available !

BAV99S Даташит, Описание, Даташиты
www.DataSheet4U.com
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
MBD128
BAV99S
High-speed switching diode array
Product specification
Supersedes data of 2001 Mar 02
2001 May 14









No Preview Available !

BAV99S Даташит, Описание, Даташиты
Philips Semiconductors
High-speed switching diode array
Product specification
BAV99S
FEATURES
Small plastic SMD package
High switching speed
Two electrically isolated series configuration arrays
Low capacitance.
APPLICATIONS
General purpose switching in e.g. surface mounted
circuits.
Rail to rail (ESD) protection.
DESCRIPTION
The BAV99S consists of four single die high speed
switching diodes in two electrically isolated series
configurations, encapsulated in the small SMD SC-88
(SOT363) plastic package.
PINNING
PIN
1
2
3
4
5
6
DESCRIPTION
anode (a1)
cathode (k2)
cathode (k3)/anode (a4)
anode (a3)
cathode (k4)
cathode (k1)/anode (a2)
6 54
654
1 23
Top view
MSA370
Marking code: K1.
1 2 3 MBL211
Fig.1 Simplified outline (SC-88; SOT363)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
Per diode
VRRM
VR
IF
IFRM
IFSM
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs
t = 1 ms
t=1s
Ts 85 °C; note 1
Note
1. Solder points at pins: 2, 3, 5 and 6.
MIN. MAX. UNIT
85 V
75 V
200 mA
450 mA
4.5 A
1A
0.5 A
250 mW
65 +150 °C
65 +150 °C
2001 May 14
2









No Preview Available !

BAV99S Даташит, Описание, Даташиты
Philips Semiconductors
High-speed switching diode array
Product specification
BAV99S
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
Per diode
VF forward voltage
see Fig.3
IF = 1 mA
IF = 10 mA
IF = 50 mA
IF = 150 mA
IR reverse current
see Fig.5
VR = 75 V
VR = 25 V; Tj = 150 °C
VR = 75 V; Tj = 150 °C
Cd diode capacitance VR = 0; f = 1 MHz; see Fig.6
trr
reverse recovery time
when switched from IF = 10 mA to IR = 10 mA;
RL = 100 ; measured at IR = 1 mA; see Fig.7
Vfr forward recovery voltage when switched to IF = 10 mA; tr = 20 ns; see Fig.8
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-s
thermal resistance from junction to soldering point note 1
Note
1. Solder points at pins: 2, 3, 5 and 6.
MAX. UNIT
715 mV
855 mV
1V
1.25 V
1 µA
30 µA
50 µA
1.5 pF
4 ns
1.75 V
VALUE
260
UNIT
K/W
2001 May 14
3










Скачать PDF:

[ BAV99S.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
BAV99High-speed switching diodesNXP Semiconductors
NXP Semiconductors
BAV99Small Signal Switching DiodeVishay Telefunken
Vishay Telefunken
BAV99SURFACE MOUNT FAST SWITCHING DIODEWon-Top Electronics
Won-Top Electronics
BAV99DUAL SERIES SWITCHING DIODEZowie Technology Corporation
Zowie Technology Corporation

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск