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B30NF10 PDF даташит

Спецификация B30NF10 изготовлена ​​​​«STMicroelectronics» и имеет функцию, называемую «STB30NF10».

Детали детали

Номер произв B30NF10
Описание STB30NF10
Производители STMicroelectronics
логотип STMicroelectronics логотип 

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B30NF10 Даташит, Описание, Даташиты
STB30NF10
STP30NF10 - STP30NF10FP
N-channel 100V - 0.038- 35A - D2PAK/TO-220/TO-220FP
Low gate charge STripFET™ II Power MOSFET
General features
Type
STB30NF10
STP30NF10
STP30NF10FP
VDSS
100V
100V
100V
RDS(on)
<0.045
<0.045
<0.045
ID
35A
35A
35A
Exceptional dv/dt capability
100% avalanche tested
Application oriented characterization
Description
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
Applications
Switching application
3
2
1
TO-220
3
1
D2PAK
3
2
1
TO-220FP
Internal schematic diagram
Order codes
Sales type
STB30NF10T4
STP30NF10
STP30NF10FP
Marking
B30NF10
P30NF10
P30NF10FP
Package
D2PAK
TO-220
TO-220FP
Packaging
Tape & reel
Tube
Tube
June 2006
Rev 2
1/16
www.st.com
16









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B30NF10 Даташит, Описание, Даташиты
Contents
Contents
STB30NF10 - STP30NF10 - STP30NF10FP
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
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B30NF10 Даташит, Описание, Даташиты
STB30NF10 - STP30NF10 - STP30NF10FP
1 Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage (VGS = 0)
VDGR
Drain-gate voltage (RGS = 20 k)
VGS Gate- source voltage
ID Drain current (continuous) at TC = 25°C
ID
IDM(1)
Drain current (continuous) at TC = 100°C
Drain current (pulsed)
Ptot Total dissipation at TC = 25°C
Derating Factor
dv/dt (2) Peak diode recovery voltage slope
EAS (3) Single pulse avalanche energy
VISO
Insulation withstand voltage (DC)
Tstg Storage temperature
Tj Max. operating junction temperature
1. Pulse width limited by safe operating area.
2. ISD 30A, di/dt 400A/µs, VDD V(BR)DSS, Tj TJMAX
3. Starting Tj = 25 °C, ID = 15A, VDD = 30V
Value
D2PAK
TO-220
TO-220FP
100
100
± 20
35 18
25 13
140 72
115 30
0.77 0.2
28
275
-- 2500
-55 to 175
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
V
°C
Table 2. Thermal data
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
TJ Maximum lead temperature for soldering purpose
D2PAK
TO-220
TO-220FP
1.30
62.5
300
5
°C/W
°C/W
°C
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Номер в каталогеОписаниеПроизводители
B30NF10STB30NF10STMicroelectronics
STMicroelectronics

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