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MBRF3035CT PDF даташит

Спецификация MBRF3035CT изготовлена ​​​​«Taiwan Semiconductor» и имеет функцию, называемую «Isolated 30.0 AMPS. Schottky Barrier Rectifiers».

Детали детали

Номер произв MBRF3035CT
Описание Isolated 30.0 AMPS. Schottky Barrier Rectifiers
Производители Taiwan Semiconductor
логотип Taiwan Semiconductor логотип 

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MBRF3035CT Даташит, Описание, Даташиты
MBRF3035CT - MBRF30150CT
Isolated 30.0 AMPS. Schottky Barrier Rectifiers
ITO-220AB
Features
Plastic material used carries Underwriters Laboratory
Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
260oC/10 seconds,0.25”(6.35mm)from case
Mechanical Data
Cases: ITO-220AB molded plastic body
Terminals: Pure tin plated, lead free. solderable per
MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in-lbs. Max.
Weight: 0.08 ounce, 2.24 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol MBRF MBRF MBRF MBRF MBRF MBRF MBRF Units
3035 3045 3050 3060 3090 30100 30150
CT CT CT CT CT CT CT
Maximum Recurrent Peak Reverse Voltage
VRRM
35 45 50 60 90 100 150 V
Maximum Working Peak Reverse Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current at
TC=130oC
Total device
Per Leg
VRMS
VDC
I(AV)
24 31 35 42 63 70 105
35 45 50 60 90 100 150
30
15
V
V
A
Peak Repetitive Forward Current Per leg (Rated VR,
Square Wave, 20KHz) at Tc=130oC
IFRM
30 A
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method )
IFSM
200 A
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage at (Note 2)
IF=15A, Tc=25oC
IF=15A, Tc=125oC
IF=30A,
IF=30A,
Tc=25oC
Tc=125oC
IRRM
VF
1.0
0.70
0.60
0.82
0.73
0.75
0.65
0.5
0.84
0.70
0.94
0.82
0.95
0.80
1.05
0.92
A
V
Maximum Instantaneous Reverse Current
@ Tc=25 oC at Rated DC Blocking Voltage Per Leg
IR
0.2
0.2
@ Tc=125 oC (Note 2)
20 15
0.2 mA
10 mA
Voltage Rate of Change, (Rated VR)
dV/dt
1,000
V/uS
Typical Junction Capacitance
Maximum Thermal Resistance Per Leg (Note 3)
Operating Junction Temperature Range
Storage Temperature Range
Cj
RθJC
TJ
TSTG
580 480
1.0
-65 to +150
-65 to +175
360
1.5
pF
oC/W
oC
oC
Notes:
1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Thermal Resistance from Junction to Case Per Leg, with Heatsink size (4”x6”x0.25”) Al-Plate.
- 160 -
Version: B07









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MBRF3035CT Даташит, Описание, Даташиты
RATINGS AND CHARACTERISTIC CURVES (MBRF3035CT THRU MBRF30150CT)
FIG.1- FORWARD CURRENT DERATING CURVE
30
RESISTIVE OR
INDUCTIVE LOAD
24
18
12
6
0
0 50 100
CASE TEMPERATURE. (oC)
FIG.3- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS PER LEG
50
10 MBRF3035CT-MBRF3045CT
MBRF30150CT
150
1
0.1 MBRF3090CT-MBRF30100CT
Tj=250C
0.01
0
Pulse Width=300 s
1% Duty Cycle
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
FORWARD VOLTAGE. (V)
FIG.5- TYPICAL JUNCTION CAPACITANCE PER LEG
5,000
Tj=250C
f=1.0MHz
Vsig=50mVp-p
1,000
FIG.2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT PER LEG
200
175
Tj=Tj max.
8.3ms Single Half Sine Wave
JEDEC Method
150
125
100
75
50
1 10
NUMBER OF CYCLES AT 60Hz
FIG.4- TYPICAL REVERSE CHARACTERISTICS
PER LEG
50
100
10
Tj=1250C
1
Tj=750C
0.1
0.01
Tj=250C
0.001
0
20 40
MBRF3035CT-MBRF3045CT
MBRF3050CT-MBRF30150CT
60 80
100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.6- TYPICAL TRANSIENT THERMAL IMPEDANCE
PER LEG
100
10.0
100
0.1
MBRF3035CT-MBRF3045CT
MBRF3050CT & MBRF3060CT
MBRF3090CT-MBRF30150CT
1 10
REVERSE VOLTAGE. (V)
1
0.1
100 0.01 0.1
1 10
T, PULSE DURATION. (sec)
100
Version: B07










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