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MBRF30150CT PDF даташит

Спецификация MBRF30150CT изготовлена ​​​​«HUAKE» и имеет функцию, называемую «Dual High Voltage Schottky Rectifier».

Детали детали

Номер произв MBRF30150CT
Описание Dual High Voltage Schottky Rectifier
Производители HUAKE
логотип HUAKE логотип 

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MBRF30150CT Даташит, Описание, Даташиты
MBRF30150CT
Dual High Voltage Schottky Rectifier
Features
Common Cathode Structure
Low Power Loss and High Efficiency
Low Forward Voltage Drop
High Surge Capability
Application:
High Frequency Switch
Free Wheeling,and Polarity Protection Applications
Absolute Maximum Ratings(Tc=25°C unless otherwise noted)
Symbol
Parameter
Value
VRRM
Maximum Repetitive Reverse Voltage
150
VR
IF(AV)
IFSM
Maximum DC Reverse Voltage
Average Rectified Forward Current, Tc=120°C
Peak Forward Surge Current,8.3ms Half Sine wave
150
15(Per Leg)
30(Per Device)
250
Tj Operating Junction Temperature
150
Tstg
Storage Temperature Range
-55 to+150
Unit
V
V
A
A
°C
°C
Thermal Characteristics(Tc=25°C unless otherwise noted)
Symbol
Parameter
RθJC
Thermal Resistance,Junction to Case Per Leg
Max
3.2
Unit
°C /W
Electrical Characteristics(Tc=25°C unless otherwise noted)
Symbol
VRRM
IR
Parameter
Maximum Repetitive
Reverse Voltage
Reverse Current
VF Forward Voltage
Test Conditons
IR=100μA
VR =150V Tc=25°C
VR =150V Tc=125°C
IF=15A Tc=25°C
IF=15A Tc=125°C
IF=30A Tc=25°C
IF=30A Tc=125°C
Min Max Unit
150 V
0.1
5
0.96
0.84
1.11
1.01
mA
V
HUAKE semiconductors 2014.08
1/3 编号:HK-WI-TD-004 版本/版次:A/0









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MBRF30150CT Даташит, Описание, Даташиты
MBRF30150CT
Dual High Voltage Schottky Rectifier
Typical Performance Characteristics
Figure 1. Forward Current Characteristics
Figure 2. Reverse Leakage Current
Figure 3. Junction Capacitance
Figure 4. Power Derating
HUAKE semiconductors 2014.08
2/3 编号:HK-WI-TD-004 版本/版次:A/0









No Preview Available !

MBRF30150CT Даташит, Описание, Даташиты
MBRF30150CT
Dual High Voltage Schottky Rectifier
SYMBOL
A
A1
A2
A3
B1
B2
B3
C
C1
C2
min
9.96
3.08
9.25
15.70
4.50
4.60
3.20
15.60
9.55
TO-220F Package Dimensions
UNITmm
nom
max SYMBOL min
nom
max
10.36
D
2.54
7.00
D1 1.25
1.35
3.28 D2 0.70
0.90
9.65 D3 0.28
0.48
16.10
E
2.34
2.74
4.90
E1
0.70
5.00
E2
1.0×45°
3.40 E3 0.36
0.65
16.00
E4
2.55
2.95
9.95 α(度)
30°
HUAKE semiconductors 2014.08
3/3 编号:HK-WI-TD-004 版本/版次:A/0










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