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PDF Si4322DY Data sheet ( Hoja de datos )
| Número de pieza | Si4322DY | |
| Descripción | N-Channel 30-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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Si4322DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
30 0.0085 at VGS = 10 V
0.0125 at VGS = 4.5 V
ID (A)a
18
15
Qg (Typ.)
11.7 nC
SCHOTTKY AND BODY DIODE PRODUCT
SUMMARY
VDS (V)
30
VSD (V)
Diode Forward Voltage
0.4 at 2 A
IS (A)
5a
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
Top View
Ordering Information: Si4322DY-T1-E3 (Lead (Pb)-free)
Si4322DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
• 100 % Rg Tested
APPLICATIONS
• Synchronous Buck-Low Side
- Notebook
- Server
- Workstation
• Synchronous Rectifier-POL
D
G
N-Channel MOSFET
S
Schottky Diode
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Limit
30
± 20
18
15
14b, c
11b, c
50
5
2.8b, c
5.4
3.4
3.1b, c
2.0b, c
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Symbol
RthJA
RthJF
Typ.
34
17
Max.
40
23
Unit
°C/W
Document Number: 73860
S09-0226-Rev. B, 09-Feb-09
www.vishay.com
1
1 page  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
22
Si4322DY
Vishay Siliconix
18
13
9
4
0
0
25 50
75 100 125 150
TC - Case Temperature (°C)
Current Derating*
7.0 2.0
5.6 1.6
4.2 1.2
2.8 0.8
1.4 0.4
0.0
0
25 50 75 100 125
TC - Case Temperature (°C)
Power Derating, Junction-to-Foot
150
0.0
0
25 50 75 100 125 150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73860
S09-0226-Rev. B, 09-Feb-09
www.vishay.com
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet Si4322DY.PDF ] | |
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